Energy gap reduction in dilute nitride GaAsSbN

Applied Physics Letters

Volumn 93, Issue 17, 2008, Pages

  Lin, Yan Ting ^a   Ma, Ta Chun ^a   Chen, Tsung Yi ^a   Lin, Hao Hsiung ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND FILMS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ENERGY GAP; METALLIC COMPOUNDS; NITRIDES; ORGANIC POLYMERS; SEMICONDUCTING GALLIUM; SOLIDS;

BAC MODELS; BAND ANTICROSSING; DILUTE NITRIDES; GAASSBN; GROWN SAMPLES; LOCALIZED LEVELS; LOWER ENERGIES; NITROGEN INCORPORATIONS; SUBSTITUTIONAL N;

GALLIUM ALLOYS;

EID: 55149093225     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3009199     Document Type: Article

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