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Volumn 301-302, Issue SPEC. ISS., 2007, Pages 378-380
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A novel approach of using a MBE template for ALD growth of high-κ dielectrics
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Author keywords
A1. Nucleation; A3. Atomic layer deposition; A3. Molecular beam epitaxy; B1. High ; B1. Oxides; B2. Dielectric materials
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Indexed keywords
ATOMIC LAYER DEPOSITION;
CURRENT DENSITY;
LEAKAGE CURRENTS;
MOLECULAR BEAM EPITAXY;
NUCLEATION;
PERMITTIVITY;
THICK FILMS;
COMPOSITE OXIDES;
ELECTRICAL PERFORMANCE;
EQUIVALENT OXIDE THICKNESS (EOT);
INTERFACIAL LAYER;
DIELECTRIC MATERIALS;
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EID: 33947327827
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.11.262 Document Type: Article |
Times cited : (10)
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References (11)
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