Doping in quantum cascade lasers. I. InAIAs-InGaAs/InP midinfrared devices

Journal of Applied Physics

Volumn 100, Issue 4, 2006, Pages

  Aellen, Thierry ^a   Beck, Mattias ^a   Hoyler, Nicolas ^a   Giovannini, Marcella ^a   Faist, Jérôme ^a   Gini, Emilio ^b  

^a Universite de Neuchatel Institut de Physique   (Switzerland)

^b ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; DOPING (ADDITIVES); INFRARED DEVICES; QUANTUM THEORY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

MIDINFRARED DEVICES; QUANTUM CASCADE LASERS; RESONANT TUNNELING TRANSPORT;

SEMICONDUCTOR LASERS;

EID: 33748296419     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2234804     Document Type: Article

References (24)

1. J. Faist, F. Capasso, D. Sivco, C. Sirtori, A. Hutchinson, and A. Cho, Science 264, 553 (1994).
2. L. Menzel et al., Appl. Phys. B: Lasers Opt. 72, 859 (2001).
3. A. Kosterev et al., Appl. Phys. B: Lasers Opt. 74, 95 (2001).
4. A. Kosterev et al., Opt. Lett. 24, 1762 (1999).
5. S. Blaser, D. Hofstetter, M. Beck, and J. Faist, Electron. Lett. 37, 778 (2001).
6. R. Martini et al., Electron. Lett. 38, 181 (2002).
7. M. Beck, D. Hofstetter, T. Aellen, J. Faist, U. Oesterle, M. Ilegems, E. Gini, and H. Melchior, Science 295, 301 (2002).
8. J. Yu, S. Slivken, A. Evans, L. Doris, and M. Razeghi, Appl. Phys. Lett. 83, 2503 (2003).
9. A. Evans, J. Yu, J. David, L. Doris, K. Mi, S. Slivken, and M. Razeghi, Appl. Phys. Lett. 84, 314 (2004).
10. D. Weidmann, F. Tittel, T. Aellen, M. Beck, D. Hofstetter, J. Faist, and S. Blaser, Appl. Phys. B: Lasers Opt. 79, 907 (2004).
11. J. Faist, D. Hofstetter, M. Beck, T. Aellen, M. Rochat, and S. Blaser, IEEE J. Quantum Electron. 38, 533 (2002).
12. M. Giehler, R. Hey, H. Kostial, S. Cronenberg, T. Ohtsuka, and L. Schrottke, Appl. Phys. Lett. 82, 671 (2003).
13. M. Giehler, H. Kostial, R. Hey, and H. Grahn, J. Appl. Phys. 96, 4755 (2004).
14. V. Jovanovic et al., Appl. Phys. Lett. 86, 211117 (2005).
15. R. Köhler et al., Nature (London) 417, 156 (2002).
16. H. Liu et al., Appl. Phys. Lett. 87, 141102 (2005).
17. J. Alton, S. Barbieri, C. Worral, M. Houghton, H. Beere, E. Linfield, and D. Richie, Proc. SP1E 5727, 65 (2005).
18. D. Hofstetter, M. Beck, T. Aellen, and J. Faist, Appl. Phys. Lett. 78, 396 (2001).
19. R. Kazarinov and R. Suris, Sov. Phys. Semicond. 5, 707 (1971).
20. R. Kazarinov and R. Suris, Sov. Phys. Semicond. 6, 120 (1972).
21. C. Sirtori, F. Capasso, J. Faist, A. Hutchinson, D. Sivco, and A. Cho, IEEE J. Quantum Electron. 34, 1722 (1998).
22. J. Faist, F. Capasso, C. Sirtori, D. Sivco, and A. Cho, in Intersubband Transitions in Quantum Wells: Physics and Device Applications II, edited by H. Liu and F. Capasso (Academic, New York, 2000), Vol. 66, Chap. 1, pp. 1-83.
23. S. Lee, M. Giehler, R. Hey, T. Ohtsuka, A. A. Wacker, and H. Grahn, Semicond. Sci. Technol. 19, 45 (2004).
24. S. Tsujino et al., Appl. Phys. Lett. 86, 062113 (2005).