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Volumn 311, Issue 7, 2009, Pages 1932-1934
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Al(In)As-(Ga)InAs strain-compensated active regions for injectorless quantum cascade lasers
a
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Author keywords
A3. Laser epitaxy; B1. Arsenates; B1. Phosphides; B2. Semiconducting III V materials; B3. Infrared devices; B3. Laser diodes
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Indexed keywords
ALUMINUM ARSENIDE;
CARRIER LIFETIME;
CRYSTAL GROWTH;
INDIUM ARSENIDE;
INFRARED DEVICES;
PHOSPHORUS COMPOUNDS;
QUANTUM CASCADE LASERS;
SEMICONDUCTING INDIUM;
STRUCTURAL OPTIMIZATION;
A3. LASER EPITAXY;
B1. ARSENATES;
B1. PHOSPHIDES;
B2. SEMICONDUCTING III/V MATERIALS;
B3. INFRARED DEVICES;
B3. LASER DIODES;
LASERS;
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EID: 63349106361
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.10.082 Document Type: Article |
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Times cited : (9)
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References (7)
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