Dependence of the device performance on the number of stages in quantum-cascade lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 808-816

  Gmachl, Claire ^a   Capasso, Federico ^a   Tredicucci, Alessandro ^a   Sivco, Deborah L ^a   Köhler, Rüdeger ^a,b   Hutchinson, Albert L ^a   Cho, Alfred Y ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT DENSITY; INFRARED RADIATION; INJECTION LASERS; MATHEMATICAL MODELS; TEMPERATURE; THRESHOLD VOLTAGE; WAVEGUIDES;

INTERSUBBAND LASERS; MID INFRARED; QUANTUM CASCADE LASERS; UNIPOLAR LASERS;

SEMICONDUCTOR LASERS;

EID: 0033123903     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788454     Document Type: Article

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