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Volumn 41, Issue 3, 2010, Pages 334-339

A complete Raman mapping of phase transitions in Si under indentation

(10) Das, C R a Hsu, H C b Dhara, S a,c Bhaduri, A K a Raj, B a Chen, L C b Chen, K H b,d Albert, S K a Ray, A e Tzeng, Y c

a INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH (India)

b NATIONAL TAIWAN UNIVERSITY (Taiwan)

c NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

d INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES (Taiwan)

e INDIAN INSTITUTE OF TECHNOLOGY (India)

Author keywords

Amorphization; Indentation; Phase transition; Raman spectroscopy; Si

Indexed keywords

AMORPHIZATION; MAPPING;

AMORPHIZATIONS; BERKOVICH TIP; CRYSTALLINE SI; NONDESTRUCTIVE TOOLS; PRESSURE CONTOURS; PRESSURE-INDUCED PHASE TRANSFORMATIONS; RAMAN LINES; RAMAN MAPPING; SI; SI SUBSTRATES;

RAMAN SPECTROSCOPY;

EID: 77949602803 PISSN: 03770486 EISSN: 10974555 Source Type: Journal
DOI: 10.1002/jrs.2430 Document Type: Article

Times cited : (17)

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