Ammonothermal GaN: Morphology and properties

Journal of Crystal Growth

Volumn 312, Issue 8, 2010, Pages 1069-1073

  Bliss, David ^a   Wang, Buguo ^b   Suscavage, Michael ^a   Lancto, Robert ^b   Swider, Stacy ^b   Eikenberry, Wayne ^a   Lynch, Candace ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b SOLID STATE SCIENTIFIC CORPORATION   (United States)

Author keywords

A1. Characterization; A2. Growth from solutions; B1. Nitrides

Indexed keywords

A2. GROWTH FROM SOLUTIONS; AMMONOTHERMAL; AMMONOTHERMAL METHOD; B1. NITRIDES; BULK CRYSTALS; CRYSTAL HABITS; ETCHING CHARACTERISTICS; FAST GROWTH RATE; GROWTH FROM SOLUTION; GROWTH SECTORS; HEXAGONAL PRISM; PROMISING MATERIALS; SECONDARY ION MASS SPECTROSCOPY; SEEDED GROWTH;

GALLIUM ALLOYS; MORPHOLOGY; SECONDARY ION MASS SPECTROMETRY; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 77949578632     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.12.007     Document Type: Article

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