Oxygen related shallow acceptor in GaN

Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 329-334

  Monemar, B ^a   Paskov, P P ^a   Tuomisto, F ^b   Saarinen, K ^b   Iwaya, M ^c   Kamiyama, S ^c   Amano, H ^c   Akasaki, I ^c   Kimura, S ^d  

^a LINKÖPING UNIVERSITY   (Sweden)

^b AALTO UNIVERSITY   (Finland)

^c MEIJO UNIVERSITY   (Japan)

^d Sumitomo Seika Chemicals Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXYGEN; PHONONS; PHOTOLUMINESCENCE; SILICON; SPECTROSCOPIC ANALYSIS;

ACCEPTOR BOUND EXCITONS (ABE); BOUND EXCITONS (BE); DONOR-ACCEPTOR PAIR (DAP) TRANSITION; RESIDUAL ACCEPTORS;

GALLIUM NITRIDE;

EID: 23844458911     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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