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Journal of Vacuum Science and Technology B

Volumn 28, Issue 1, 2010, Pages

Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors

(10) Flachowsky, Stefan a Illgen, Ralf a Herrmann, Tom a Klix, Wilfried a Stenzel, Roland a Ostermay, Ina b Naumann, Andreas b Wei, Andy c Höntschel, Jan c Horstmann, Manfred c

a UNIVERSITY OF APPLIED SCIENCES DRESDEN (Germany)

b Fraunhofer Center Nanoelectronic Technologies (Germany)

c GLOBALFOUNDRIES (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; ELECTRON BEAM LITHOGRAPHY; HOLE MOBILITY; METALLIC COMPOUNDS; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; SI-GE ALLOYS; SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; STRAINED SILICON;

DRAIN STRESSORS; METALOXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFETS); NANOSCALED; PROCESSES INTEGRATIONS; SILICON CARBON; SILICON GERMANIUMS (SIGE); SILICON-ON-INSULATOR METAL OXIDE SEMICONDUCTOR FIELD EFFECT; SIMULATION STUDIES; SOURCE-DRAIN; TRANSISTOR PERFORMANCE;

MOSFET DEVICES;

EID: 77949462666 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3258631 Document Type: Conference Paper

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.