Electrical modeling of long-wavelength VCSELs for intrinsic parameters extraction

IEEE Journal of Quantum Electronics

Volumn 46, Issue 3, 2010, Pages 313-322

  Bacou, Alexandre ^a   Hayat, Ahmad ^a   Iakovlev, Vladimir ^b   Syrbu, Alexei ^c   Rissons, Angélique ^a   Mollier, Jean Claude ^a   Kapon, Eli ^c  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b BeamExpress SA   (Switzerland)

^c EPFL   (Switzerland)

Author keywords

Electrical modeling; Intrinsic parameters; Longwavelength vcsels; S parameters; Turn on delay; Wafer fusion

Indexed keywords

CAVITY PARAMETERS; CIRCUIT ELEMENTS; DELAY TIME; DEVICE UNDER TEST; EFFICIENT METHOD; ELECTRICAL MODELING; EQUIVALENT ELECTRICAL CIRCUITS; INTRINSIC FREQUENCY RESPONSE; INTRINSIC PARAMETERS; LONG WAVELENGTH; NUMERICAL OPTIMIZATIONS; OPTICAL CAVITIES; PARASITICS; RATE EQUATIONS; S-PARAMETERS; SMALL-SIGNAL MODULATION RESPONSE; STATIC AND DYNAMIC; T-MATRIX FORMALISM;

SCATTERING PARAMETERS; SURFACE EMITTING LASERS;

FREQUENCY RESPONSE;

EID: 77949459631     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2009.2031312     Document Type: Article

References (35)

1. A. Caliman, A. Mereuta, A. Sirbu, V. Iakovlev, and E. Kapon, "Wafer-fused 1550-nm band VCSELs with fundamental mode output exceeding 6 mW," in 34th European Conf. Optical Communication, 2008. ECOC 2008., 2008, pp. 1-2.
2. A. Mereuta, V. Iakovlev, A. Caliman, P. Royo, A. Mircea, A. Rudra, G. Suruceanu, A. Syrbu, and E. Kapon, "High single mode power wafer fused InAlGaAs/InP -AlGaAs/GaAs VCSELs emitting in the 1.3-1.6 μm wavelength range," in IEEE 19th Int. Conf. Indium Phosphide & Related Materials, 2007. IPRM '07., 2007, pp. 430-433.
3. A. Syrbu, A. Mereuta, V. Iakovlev, A. Caliman, P. Royo, and E. Kapon, "10 Gbps VCSELs with high single mode output in 1310 nm and 1550 nm wavelength bands," in Conf. Optical Fiber Communication/National Fiber Optic Engineers Conf, 2008. OFC/NFOEC2008., 2008, pp. 1-3.
4. M. Ortsiefer, W. Hofmann, E. Ronneberg, A. Boletti, A. Gatto, P. Boffi, J. Rosskopf, R. Shau, C. Neumeyr, G. Bohm, M. Martinelli, and M.-C. Amann, "High speed 1.3 μVCSELs for .12.5 Gbit/s optical interconnects," Electron. Lett., vol. 44, no.16, pp. 974-975, 2008.
5. E. Söderberg, J. Gustavsson, P. Modh, A. Larsson, Z. Zhang, J. Berggren, and M. Hammar, "High-temperature dynamics, high-speed modulation, and transmission experiments using 1.3- μm InGaAs single-mode VCSELs," J. Lightw. Technol, vol.25, no.9, pp. 2791-2798, 2007.
6. P. Mena, J. Morikuni, S.-M. Kang, A. Harton, and K. Wyatt, "A comprehensive circuit-level model of vertical-cavity surface-emitting lasers," J. Lightw. Technol, vol.17, no.12, pp. 2612-2632, 1999.
7. J. Katz, S. Margalit, C Harder, D. Wilt, and A. Yariv, The intrinsic electrical, equivalent circuit of a laser diode, IEEE J. Quantum Electron., vol.17, pp. 4-7, 1981. (Pubitemid 11479975)
8. R. Tucker and D. Pope, Microwave circuit models of semiconductor injection lasers, IEEE Trans. Microw. Theory Tech., MTT-31 289-294, 1983. (Pubitemid 13543801)
9. R. Tucker, "Large-signal circuit model, for simulation of injection-laser modulation dynamics," IEE Proc. I-Solid-State and Electron Devices, vol.128, no.5, pp. 180-184, 1981.
10. W. Way, "Large signal nonlinear distortion prediction for a singlemode laser diode under microwave intensity modulation," J. Lightw. Technol, vol.5, no.3, pp. 305-315, 1987.
11. C.Harder, J. Katz, S. Margalit, J. Shacham, and A. Yariv, Noise equivalent circuit of a semiconductor laser diode, IEEE J. Quantum Electron., 18 333-337, 1982. (Pubitemid 12477188)
12. T. T. Bich-Ha and J.-C. Mollier, "Noise equivalent circuit of a twomode semiconductor laser with the contribution of both the linear and the nonlinear gain," IEEE J. Sel. Topics Quantum Electron., vol.3, pp. 304-308, 1997.
13. J. Perchoux, A. Rissons, and J.-C. Mollier, "Multimode VCSEL model for wide frequency-range RIN simulation," Optics Commun., vol.281, pp. 162-169, 2008.
14. J. Gao, X. Li, J. Flucke, and. G. Boeck, "Direct parameter-extraction method for laser diode rate-equation model," J. Lightw. Technol, vol.22, no.6, pp. 1604-1609, 2004.
15. W. Hofmann, N. Zhu, M. Ortsiefer, G. Bohm, J. Rosskopf, L. Chao, S. Zhang, M. Maute, and M.-C. Amann, " 10-Gb/s data transmission using BCB passivated 1.55-μm InGaAlAs-InP VCSELs," Photon. Technol. Lett., vol.18, no.2, pp. 424-426, 2006.
16. C. O'Brien, M. Majewski, and A. Rakic, A critical, comparison of high-speed VCSEL characterization techniques," J. Lightw. Technol, 25, 2, pp. 597-605, 2007.
17. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits. News York: Wiley, 1995. (Pubitemid 46563400)
18. T. O. Masakazu Morishita and J. Ichi Nishizawa, "Impedance characteristics of double-hetero structure laser diodes," Solid State Electron., vol.22, pp. 951-962, 1979.
19. V. Iakovlev, G. Suruceanu, A. Caliman, A. Mereuta, A. Mircea, C.-A. Berseth, A. Syrbu, A. Rudra, and E. Kapon, "High-performance singlemode VCSELs in the 1310-nm waveband," IEEE Photonics Technol. Lett., vol.17, pp. 947-949, May 2005.
20. A. Syrbu, V. Iakovlev, G. Suruceanu, A. Caliman, A. Mereuta, A. Mircea, C.-A. Berseth, E. Diechsel, J. Boucart, A. Rudra, and E. Kapon, "VCSELs emitting in the 1310-nm waveband for novel optical, communication applications," in Proc. SPIE, San Jose, CA, Mar. 2005, vol.5737, pp. 167-173.
21. J. Boucart, G. Suruceanu, P. Royo, V. Iakovlev, A. Syrbu, A. Caliman, A. Mereuta, A. Mircea, C.-A. Berseth, A. Rudra, and E. Kapon, "3.125-Gb/s modulation up to 70 °C using 1.3-μm VCSELs fabricated with localized wafer fusion for 10GBASE LX4 applications," IEEE Photonics Technol. Lett., vol.18, pp. 571-573, 2006.
22. T. Fukushima, A. Kasukawa, M. Iwase, T. Namegaya, and M. Shibata, "Compressively strained 1.3 μm. InAsP/InP and GalnAsP/InP multiple quantum well, lasers for high-speed parallel data transmission systems," IEEE J. Quantum Electron., vol.29, pp. 1536-1543, 1993.
23. D. Wiedenmann, R. King, C. Jung, R. Jager, R. Michalzik, P. Schnitzer, M. Kicherer, and K. Ebeling, "Design and analysis of single-mode oxidized VCSELs for high-speed optical interconnects," IEEE J. Sel. Topics Quantum Electron., vol.5, pp. 503-511, 1999.
24. J. Scott, D. Young, B. Thibeault, M. Peters, and L. Coldren, "Design of index-guided vertical-cavity lasers for low temperature-sensitivity, sub-milliamp thresholds, and single-mode operation," IEEE J. Sel. Topics Quantum Electron., vol.1, pp. 638-648, 1995.
25. J. Wang, P. von Allmen, J.-P. Leburton, and K. Linden, "Auger recombination in long-wavelength strained-layer quantum-well structures," IEEEJ. Quantum. Electron., vol.31, pp. 864-875, 1995.
26. 11As long-wavelength, strained quantum-well lasers," IEEE J. Quantum Electron., vol.35, pp. 771-782, 1999.
27. J. Yong, J. Rorison, and. I. White, "1.3μm quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: A theoretical, study," IEEE J. Quantum Electron., vol.38, pp. 1553-1564, 2002.
28. S. Selmic, T.-M. Chou, J. Sih, J. Kirk, A. Mantle, J. Butler, D. Bour, and G. Evans, "Design and characterization of 1.3-μm AlGaInAs-InP multiple-quantum-well lasers," IEEE J. Sel. Topics Quantum Electron., vol.7, pp. 340-349, 2001.
29. E. Bjorlin, J. Geske, M. Mehta, J. Piprek, and J. Bowers, "Temperature dependence of the relaxation resonance frequency of long-wavelength vertical-cavity lasers," IEEE Photon. Technol. Lett., vol.17, pp. 944-946, 2005.
30. A. Bacou, A. Hayat, A. Rissons, V. Iakovlev, A. Syrbu, J.-C. Mollier, and E. Kapon, "VCSEL intrinsic response extraction using T-matrix formalism," IEEE Photon. Technol. Lett., vol.21, pp. 957-959, 2009.
31. M. Achtenhagen, A. Hardy, and E. Kapon, "Threshold analysis of vertical-cavity surface-emitting lasers with intracavity contacts," IEEE J. Quantum Electron., vol.42, pp. 891-897, 2006.
32. R. E. Collin, Foundations for Microwave Engineering. New York: McGraw-Hill, 1992.
33. R. Tucker and I. Kaminow, "High-frequency characteristics of directly modulated InGaAsP ridge waveguide and buried heterostructure lasers," J. Lightw. Technol, vol.2, no.4, pp. 385-393, 1984.
34. H. Li and K. Iga, Vertical-Cavity Surface-Emitting Laser Devices. New York: Springer, 2002.
35. B. Bennett, R. Soref, and J. Del Alamo, "Carrier-induced change in refractive index, of InP, GaAs and InGaAsP," IEEE J. Quantum Electron., vol. 26, pp. 113-122, 1990.