-
1
-
-
0036684764
-
Development of InGaAsN-based 1.3 μm VCSELs
-
Aug
-
H. Riechert, A. Ramakrishnan, and G. Steinle, "Development of InGaAsN-based 1.3 μm VCSELs," Semicond. Sci. Technol., vol. 17, no. 8, pp. 892-897, Aug. 2002.
-
(2002)
Semicond. Sci. Technol
, vol.17
, Issue.8
, pp. 892-897
-
-
Riechert, H.1
Ramakrishnan, A.2
Steinle, G.3
-
2
-
-
33646168951
-
1310 nm VCSELs in 1-10 Gb/s commercial applications
-
Feb
-
J. Jewell, L. Graham, M. Crom, K. Maranowski, J. Smith, and T. Fanning, "1310 nm VCSELs in 1-10 Gb/s commercial applications," Proc. SPIE vol. 6132, p. 613 204, Feb. 2006.
-
(2006)
Proc. SPIE
, vol.6132
, pp. 613-204
-
-
Jewell, J.1
Graham, L.2
Crom, M.3
Maranowski, K.4
Smith, J.5
Fanning, T.6
-
3
-
-
33845728799
-
Single-mode monolithic quantum-dot VCSEL in 1.3 μm with sidemode suppression ratio over 30 dB
-
Apr. 1
-
Y. H. Chang, P. C. Peng, W. K. Tsai, G. Lin, I. L. Fang, R. S. Hsiao, H. P. Yang, H. C. Yu, K. F. Lin, J. Y. Chi, S. C. Wang, and H. C. Kuo, "Single-mode monolithic quantum-dot VCSEL in 1.3 μm with sidemode suppression ratio over 30 dB," IEEE Photon. Technol. Lett., vol. 18, no. 7, pp. 847-849, Apr. 1, 2006.
-
(2006)
IEEE Photon. Technol. Lett
, vol.18
, Issue.7
, pp. 847-849
-
-
Chang, Y.H.1
Peng, P.C.2
Tsai, W.K.3
Lin, G.4
Fang, I.L.5
Hsiao, R.S.6
Yang, H.P.7
Yu, H.C.8
Lin, K.F.9
Chi, J.Y.10
Wang, S.C.11
Kuo, H.C.12
-
4
-
-
12344265906
-
Efficient CW lasing and high-speed modulation of 1.3-μm AlGaInAs VCSELs with good high temperature lasing performance
-
Jan
-
J. Cheng, C.-L. Shieh, X. Huang, L. Guoli, M. V. R. Murty, C. C. Lin, and D. X. Xu, "Efficient CW lasing and high-speed modulation of 1.3-μm AlGaInAs VCSELs with good high temperature lasing performance," IEEE Photon. Technol. Lett., vol. 17, no. 1, pp. 7-9, Jan. 2005.
-
(2005)
IEEE Photon. Technol. Lett
, vol.17
, Issue.1
, pp. 7-9
-
-
Cheng, J.1
Shieh, C.-L.2
Huang, X.3
Guoli, L.4
Murty, M.V.R.5
Lin, C.C.6
Xu, D.X.7
-
5
-
-
27744564902
-
Efficient modulation of InP-based 1.3- μm VCSELs with AsSb-based DBRs
-
Nov
-
D. Feezell, L. A. Johansson, D. A. Buell, and L. A. Coldren, "Efficient modulation of InP-based 1.3- μm VCSELs with AsSb-based DBRs," IEEE Photon. Technol. Lett., vol. 17, no. 11, pp. 2253-2255, Nov. 2005.
-
(2005)
IEEE Photon. Technol. Lett
, vol.17
, Issue.11
, pp. 2253-2255
-
-
Feezell, D.1
Johansson, L.A.2
Buell, D.A.3
Coldren, L.A.4
-
6
-
-
41749105999
-
-
M.-R. Park, O.-K. Kwon, W.-S. Han, K.-H. Lee, S.-J. Park, and B.-S. Yoo, All-epitaxial InAlGaAs-InP VCSELs in the 1.3-1.6- μm wavelength range for CWDM band applications, IEEE Photon. Technol. Lett., 18, no. 13-16, pp. 1717-1719, Aug. 2006.
-
M.-R. Park, O.-K. Kwon, W.-S. Han, K.-H. Lee, S.-J. Park, and B.-S. Yoo, "All-epitaxial InAlGaAs-InP VCSELs in the 1.3-1.6- μm wavelength range for CWDM band applications," IEEE Photon. Technol. Lett., vol. 18, no. 13-16, pp. 1717-1719, Aug. 2006.
-
-
-
-
7
-
-
32044454038
-
3.125-Gb/s modulation up to 70 °C using 1.3- μm VCSELs fabricated with localized wafer fusion for 10GBASE LX4 applications
-
Feb. 15
-
J. Boucart, G. Suruceanu, P. Royo, V. I. Iakovlev, A. Syrbu, A. Caliman, A. Mereuta, A. Mircea, C.-A. Berseth, A. Rudra, and E. Kapon, "3.125-Gb/s modulation up to 70 °C using 1.3- μm VCSELs fabricated with localized wafer fusion for 10GBASE LX4 applications," IEEE Photon. Technol. Lett., vol. 18, no. 4, pp. 571-573, Feb. 15, 2006.
-
(2006)
IEEE Photon. Technol. Lett
, vol.18
, Issue.4
, pp. 571-573
-
-
Boucart, J.1
Suruceanu, G.2
Royo, P.3
Iakovlev, V.I.4
Syrbu, A.5
Caliman, A.6
Mereuta, A.7
Mircea, A.8
Berseth, C.-A.9
Rudra, A.10
Kapon, E.11
-
8
-
-
0042570649
-
High performance 1.3 μm InGaAs vertical cavity surface emitting lasers
-
Jul. 24
-
P. Sundgren, J. Berggren, P. Goldman, and M. Hammar, "High performance 1.3 μm InGaAs vertical cavity surface emitting lasers," Electron. Lett., vol. 39, no. 15, pp. 1128-1129, Jul. 24, 2003.
-
(2003)
Electron. Lett
, vol.39
, Issue.15
, pp. 1128-1129
-
-
Sundgren, P.1
Berggren, J.2
Goldman, P.3
Hammar, M.4
-
9
-
-
14544307004
-
Single mode 1.27 μm InGaAs:SB-GaAs-GaAsP quantum well vertical cavity surface emitting lasers
-
Jan./Feb
-
H.-C. Kuo, Y. H. Chang, H. H. Yao, Y. A. Chang, F-I. Lai, M. Y. Tsai, and S. C. Wang, "Single mode 1.27 μm InGaAs:SB-GaAs-GaAsP quantum well vertical cavity surface emitting lasers," IEEE J. Sel. Top. Quantum Electron., vol. 11, no. 1, pp. 121-126, Jan./Feb. 2005.
-
(2005)
IEEE J. Sel. Top. Quantum Electron
, vol.11
, Issue.1
, pp. 121-126
-
-
Kuo, H.-C.1
Chang, Y.H.2
Yao, H.H.3
Chang, Y.A.4
Lai, F.-I.5
Tsai, M.Y.6
Wang, S.C.7
-
10
-
-
33747651097
-
Wavelength extension effect on lasing characteristics of highly-strained GaInAs/GaAs vertical-cavity surface-emitting lasers with cavity detuning
-
Aug
-
K. Takeda, T. Miyamoto, T. Kondo, Y. Uchiyama, N. Kitabayashi, T. Uchida, A. Matsutani, and F. Koyama, "Wavelength extension effect on lasing characteristics of highly-strained GaInAs/GaAs vertical-cavity surface-emitting lasers with cavity detuning," Jpn. J. Appl. Phys. vol. 45, no. 8B, pp. 6691-6696, Aug. 2006.
-
(2006)
Jpn. J. Appl. Phys
, vol.45
, Issue.8 B
, pp. 6691-6696
-
-
Takeda, K.1
Miyamoto, T.2
Kondo, T.3
Uchiyama, Y.4
Kitabayashi, N.5
Uchida, T.6
Matsutani, A.7
Koyama, F.8
-
11
-
-
2442459997
-
Temperature sensitivity of the threshold current of long wavelength InGaAs-GaAs VCSELs with a large gain-cavity detuning
-
May
-
S. Mogg, N. Chitica, U. Christiansson, R. Schatz, P. Sundgren, C. Asplund, and M. Hammar, "Temperature sensitivity of the threshold current of long wavelength InGaAs-GaAs VCSELs with a large gain-cavity detuning," IEEE J. Quantum Electron., vol. 40, no. 5, pp. 453-462, May 2004.
-
(2004)
IEEE J. Quantum Electron
, vol.40
, Issue.5
, pp. 453-462
-
-
Mogg, S.1
Chitica, N.2
Christiansson, U.3
Schatz, R.4
Sundgren, P.5
Asplund, C.6
Hammar, M.7
-
12
-
-
18244416628
-
Transverse mode selection in large area oxide confined VCSELs using a shallow surface structure
-
Dec
-
H. Martinsson, J. Vukusic, M. Grabherr, R. Michalzik, R. Jäger, K. J. Ebeling, and A. Larsson, "Transverse mode selection in large area oxide confined VCSELs using a shallow surface structure," IEEE Photon. Technol. Lett., vol. 11, no. 12, pp. 1536-1538, Dec. 1999.
-
(1999)
IEEE Photon. Technol. Lett
, vol.11
, Issue.12
, pp. 1536-1538
-
-
Martinsson, H.1
Vukusic, J.2
Grabherr, M.3
Michalzik, R.4
Jäger, R.5
Ebeling, K.J.6
Larsson, A.7
-
13
-
-
0035263981
-
Large-area single-mode VCSELs and the self-aligned surface relief
-
Mar./Apr
-
H. Unold, S. W. Z. Mahmoud, R. Jäger, M. Grabherr, R. Michalzik, and K. J. Ebeling, "Large-area single-mode VCSELs and the self-aligned surface relief," IEEE J. Sel. Topics Quantum Electron., vol. 7, no. 2, pp. 386-392, Mar./Apr. 2000.
-
(2000)
IEEE J. Sel. Topics Quantum Electron
, vol.7
, Issue.2
, pp. 386-392
-
-
Unold, H.1
Mahmoud, S.W.Z.2
Jäger, R.3
Grabherr, M.4
Michalzik, R.5
Ebeling, K.J.6
-
14
-
-
1442313199
-
Single fundamental mode output power exceeding 6 mW from VCSELs with a shallow surface relief
-
Feb
-
Å. Haglund, J. S. Gustavsson, J. Vukusic, P. Modh, and A. Larsson, "Single fundamental mode output power exceeding 6 mW from VCSELs with a shallow surface relief," IEEE Photon. Technol. Lett., vol. 16, no. 2, pp. 368-370, Feb. 2004.
-
(2004)
IEEE Photon. Technol. Lett
, vol.16
, Issue.2
, pp. 368-370
-
-
Haglund, A.1
Gustavsson, J.S.2
Vukusic, J.3
Modh, P.4
Larsson, A.5
-
15
-
-
33947702138
-
Suppression of higher order transverse and oxide modes in 1.3 μm InGaAs VCSELs by an inverted surface relief
-
May
-
E. Söderberg, J. S. Gustavsson, P. Modh, A. Larsson, Z. Z. Zhang, J. Berggren, and M. Hammar, "Suppression of higher order transverse and oxide modes in 1.3 μm InGaAs VCSELs by an inverted surface relief," IEEE Photon. Technol. Lett., vol. 19, no. 5, pp. 327-329, May 2007.
-
(2007)
IEEE Photon. Technol. Lett
, vol.19
, Issue.5
, pp. 327-329
-
-
Söderberg, E.1
Gustavsson, J.S.2
Modh, P.3
Larsson, A.4
Zhang, Z.Z.5
Berggren, J.6
Hammar, M.7
-
16
-
-
21044436420
-
Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm
-
Jul
-
S. J. Chang, H. C. Yu, Y. K. Su, I. L. Chen, T. D. Lee, C. M. Lu, C. H. Chiou, Z. H. Lee, H. P. Yang, and C. P. Sung, "Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm," Mater. Sci. Eng. B, vol. 121, no. 1/2, pp. 60-63, Jul. 2005.
-
(2005)
Mater. Sci. Eng. B
, vol.121
, Issue.1-2
, pp. 60-63
-
-
Chang, S.J.1
Yu, H.C.2
Su, Y.K.3
Chen, I.L.4
Lee, T.D.5
Lu, C.M.6
Chiou, C.H.7
Lee, Z.H.8
Yang, H.P.9
Sung, C.P.10
-
17
-
-
33747782140
-
High speed, high temperature operation of 1.28 μm single mode InGaAs VCSELs
-
Aug
-
E. Söderberg, J. S. Gustavsson, P. Modh, A. Larsson, Z. Zhang, J. Berggren, and M. Hammar, "High speed, high temperature operation of 1.28 μm single mode InGaAs VCSELs," Electron. Lett., vol. 42, no. 17, pp. 978-979, Aug. 2006.
-
(2006)
Electron. Lett
, vol.42
, Issue.17
, pp. 978-979
-
-
Söderberg, E.1
Gustavsson, J.S.2
Modh, P.3
Larsson, A.4
Zhang, Z.5
Berggren, J.6
Hammar, M.7
-
19
-
-
0036766893
-
Analog modulation properties of oxide confined VCSELs at microwave frequencies
-
Sep
-
C. Carlsson, H. Martinsson, R. Schatz, J. Halonen, and A. Larsson, "Analog modulation properties of oxide confined VCSELs at microwave frequencies," J. Lightw. Technol., vol. 20, no. 9, pp. 1740-1749, Sep. 2002.
-
(2002)
J. Lightw. Technol
, vol.20
, Issue.9
, pp. 1740-1749
-
-
Carlsson, C.1
Martinsson, H.2
Schatz, R.3
Halonen, J.4
Larsson, A.5
|