High single mode power wafer fused InAlGaAs/InP - AlGaAs/GaAs VCSELs emitting in the 1.3-1.6μm wavelength range

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2007, Pages 430-433

  Mereuta, A ^a   Iakovlev, V ^b   Caliman, A ^a   Royo, P ^b   Mircea, A ^b   Rudra, A ^a   Suruceanu, G ^b   Syrbu, A ^b   Kapon, E ^a,b  

^a EPFL   (Switzerland)

^b BeamExpress SA   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; WAFER BONDING; WAVELENGTH;

MODULATION SPEED; POLARIZATION STABILITY; SINGLE MODE POWER;

SURFACE EMITTING LASERS;

EID: 34848850410     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2007.381216     Document Type: Conference Paper

References (10)

1. Fumio Koyama, « Recent Advances of VCSEL Photonics », Journ.Light.Techn., Vol.24, No. 12, December 2006, pp.4502-4513.
2. G. Totschnig, M. Lackner, R. Shau, M. Ortsiefer, J. Rosskopf, M. C. Amann, and F. Winter, "High-speed verticalcavity surface-emitting laser _VCSEL_absorption spectroscopy of ammonia _NH3_near 1.54 _m," Appl. Phys. B 76_5_, 603-608 _2003.
3. Lauer, C.; Szalay, S.; Bohm, G.; Lin, C.; Kohler, F.; Amann, M-C.; " Laser hygrometer using a vertical-cavity surface-emitting laser (VCSEL) with an emission wavelength of 1.84 /spl mu/m", Instrumentation and Measurement, IEEE Transactions on Volume 54, Issue 3, June 2005 Page(s):1214-1218
4. T. Nishida, M. Takaya, S. Kakinuma, and T. Kaneko, "4.2 mW GaInNAs long-wavelength VCSEL grown by metalorganic chemical vapor deposition," IEEE J. Sel. Topics Quantum Electron., vol. 11, no. 5, pp. 958-961, Mar./Sep. 2005.
5. D. Freezell, D. A. Buell, and L. A. Coldren, "InP-based 1.3-1.6 μm VCSELs with selectively etched tunnel-junction apertures on a wavelength flexible platform," IEEE Photon. Technol. Lett., vol. 17, no. 10, pp. 2017-2019, Oct. 2005.
6. V.Iakovlev, G.Suruceanu, A. Caliman, A. Mereuta, A. Mircea, C.-A. Berseth, A. Syrbu, A. Rudra, and E. Kapon, "High-performance singlemode VCSELs in the 1310-nm waveband," IEEE Photon. Technol. Lett, vol. 17, no. 5, pp. 947-949, May 2005.
7. A.Mereuta, A. Sirbu, V. Iakovlev, A. Rudra, A. Caliman, G. Suruceanu, C.-A. Berseth, E. Deichsel, and E.Kapon, "1.5 μm VCSEL Structure Optimization for High-Power and High-Temperature Operation", Joum. Cryst. growth, 272 (2004), 520-525.
8. M. V. R. Murty, X. D. Huang, G. L. Liu, C. C. Lin, D. Xu, C. L. Shieh, H. C. Lee, and J. Cheng, "Long-wavelength VCSEL-based CWDM scheme for 10-Gbe links," IEEE Photon. Technol. Lett., vol. 17, no. 6, pp. 1286-1288, Jun. 2005.
9. A.W. Fang, H. Park, R.Jones, O. Cohen, M. J. Paniccia, and J. E. Bowers. "A Continuous-Wave Hybrid AlGaInAs-Silicon Evanescent Laser," IEEE Photon. Technol. Lett., vol. 18, no. 10, pp. 1143-1146, May. 2006
10. Mircea, A.; Caliman, A.; Iakovlev, V.; Mereuta, A.; Suruceanu, G.; Berseth, C.-A.; Royo, P.; Syrbu, A.; Kapon, E. Cavity Mode-Gain Peak Tradeoff for 1320-nm Wafer-Fused VCSELs With 3-mW Single-Mode Emission Power and 10-Gb/s Modulation Speed Up to 70°C Phot. Techn. Lett. V. 19, Issue 2, 2007, pp. 121-123.