Threshold analysis of vertical-cavity surface-emitting lasers with intracavity contacts

IEEE Journal of Quantum Electronics

Volumn 42, Issue 9, 2006, Pages 891-897

  Achtenhagen, Martin ^a   Hardy, Amos A ^b   Kapon, Eli ^a  

^a EPFL   (Switzerland)

^b TEL AVIV UNIVERSITY   (Israel)

Author keywords

Laser modes; Laser resonators; Semiconductor lasers

Indexed keywords

CURRENT DENSITY; LASER MODES; LASER RESONATORS; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; POLARIZATION; REFLECTION;

DISTRIBUTED BRAGG REFLECTORS (DBRS); INTRACAVITY CONTACTS; THRESHOLD ANALYSIS; THRESHOLD CURRENT DENSITY; VERTICAL-CAVITY SURFACE-EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 33746473623     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2006.879813     Document Type: Article

References (25)

1. N. Nishiyama, C. Caneau, S. Tsuda, G. Guryanov, M. Hu, R. Bhat, and C.-E. Zah, "10-Gb/s Error-free transmission under optical reflection using isolator-free 1.3-μm InP-based vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 17, no. 3, pp. 1605-1607, Mar. 2005.
2. V. Jayaraman, M. Metha, A. W. Jackson, S. Wu, Y. Okuno, J. Piprek, and J. E. Bowers, "High power 1320 nm wafer-bonded VCSELs with tunnel junctions," IEEE Photon. Technol. Lett., vol. 15, no. 11, pp. 1495-1497, Nov. 2003.
3. A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, "1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs," IEEE Photon. Technol. Lett., vol. 16, no. 5, pp. 1230-1232, May 2004.
4. T. Nguyen, C. Shen, X. Wu, T. Pinnington, J. Krogen, B. Witzigmann, C. Tsai, L. Cote, M. Geva, D. Huynh, A. Konkar, and P. C. Chen, "Design and fabrication of 1.3 μm vertical-cavity surface-emitting lasers using dielectric reflectors," IEEE Photon. Technol. Lett., vol. 15, no. 11, pp. 1498-1500, Nov. 2003.
5. 1-xAs double heterostructure planar stripe laser," Jpn. J. Appl. Phys., vol. 41, pp. 1585-1592, 1973.
6. M. Achtenhagen and A. Hardy, "Lateral current spreading in ridge waveguide laser diodes," Appl. Phys. Lett., vol. 74, no. 10, pp. 1364-1366, 1999.
7. D. Ban, E. H. Sargent, S. J. Dixon-Warren, A. J. SpringThorpe, and J. K. White, "Direct observation of lateral current spreading in ridge waveguide lasers using scanning voltage microscopy," Appl. Phys. Lett., vol. 82, no. 23, pp. 4166-4168, 2003.
8. M. H. MacDougal, J. Geske, C.-K. Lin, A. E. Bond, and P. D. Daèkus, "Low resistance intracavity-contacted oxide-aperture VCSELs," IEEE Photon. Technol. Lett., vol. 10, no. 1, pp. 9-11, Jan. 1998.
9. B. Hangartner, J. Piprek, M. Streiff, S. Odermatt, B. Witzigmann, and A. Witzig, "Internal device physics of 1.3 μm vertical-cavity surface-emitting laser," Proc. SPIE Int. Soc. Opt. Eng., vol. 5737, pp. 132-141, 2005.
10. Y. Xiong and Y.-H. Lo, "Current spreading and carrier diffusion in long-wavelength vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 10, no. 9, pp. 1202-1204, Sep. 1998.
11. M. Grabherr, R. Jager, R. Michatzik, B. Weigl, G. Reiner, and K. J. Ebeling, "Efficient single-mode oxide-confined GaAs VCSEL's emitting in the 850-nm wavelength regime," IEEE Photon. Technol. Lett., vol. 9, no. 10, pp. 1304-1306, Oct. 1997.
12. J. P. Donnelly and C. E. Hurwitz, "High-resistivity layers in n-InP produced by Fe ion implantation," Solid State Electron., vol. 21, pp. 475-478, 1978.
13. R. Papannareddy, W. E. Ferguson, and J. K. Butler, "Four models of lateral current spreading in double-heterostructure stripe-geometry lasers," IEEE J. Quantum Electron., vol. 24, no. 1, pp. 60-65, Jan. 1988.
14. N. K. Dutta, "Analysis of current spreading, carrier diffusion, and transverse mode guiding in surface emitting lasers," J. Appl. Phys., vol. 68, no. 5, pp. 1961-1963, 1990.
15. W. M. Man and S.-F. Yu, "Comprehensive modeling of diffused quantum-well vertical-cavity surface-emitting lasers," IEEE J. Sel. Topics Quantum Electron., vol. 4, no. 4, pp. 715-722, Apr. 1998.
16. F. K. Reinhart, "The influence of non-linear recombination and diffusion on the photoluminescence yield of undoped semiconductors," J. Appl. Phys., vol. 99, p. 073102, 2006.
17. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits. New York: Wiley, 1995.
18. A. G. Fox and T. Li, "Resonant modes in a maser interferometer," Bell Syst. Tech. J., vol. 40, pp. 453-488, 1961.
19. M. Achtenhagen, A. Hardy, and E. Kapon, "Design of distributed Bragg reflector structures for transverse-mode discrimination in vertical-cavity surface-emitting lasers," J. Lightw. Technol., vol. 22, no. 8, pp. 1962-1967, Aug. 2004.
20. J. W. Goodman, Introduction to Fourier Optics. New York: McGraw-Hill, 1968.
21. M. Ortsiefer, "Langwellige Vertikalresonator-Laserdioden im Materialsystem InGaAlAs/InP," Ph.D. dissertation, Technical University of Munich, Munich, Gemany, 2000.
22. R. J. Lang, A. Hardy, R. Parke, D. Mehuys, S. O'Brien, J. Major, and D. Welch, "Numerical analysis of flared semiconductor laser amplifiers," IEEE J. Quantum Electron., vol. 29, no. 6, pp. 2044-2051, Jun. 1993.
23. J. Martin-Regalado, F. Prati, M. San Miguel, and N. B. Abraham, "Polarization properties of vertical-cavity surface-emitting lasers," IEEE J. Quantum Electron., vol. 33, no. 5, pp. 765-783, May 1997.
24. S. H. Friedberg and A. J. Insel, Introduction to Linear Algebra With Applications. Englewood Cliffs, NJ: Prentice-Hall, 1986.
25. M. Achtenhagen, A. Hardy, and E. Kapon, "Three-dimensional analysis of mode discrimination in vertical-cavity surface-emitting lasers," Appl. Opt., vol. 44, no. 14, pp. 2832-2838, 2005.