10-Gb/s data transmission using BCB passivated 1.55-μm InGaAlAs-InP VCSELs

IEEE Photonics Technology Letters

Volumn 18, Issue 2, 2006, Pages 424-426

  Hofmann, W ^b   Zhu, N H ^c   Ortsiefer, M ^d   Bohm G ^b   Rosskopf, J ^d   Chao, L ^c   Zhang, S ^c   Maute, M ^b   Amann, M C ^a,b  

^a IEEE

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c Natl Ctr Optoelectron Technol   (China)

^d VERTILAS GMBH   (Germany)

Author keywords

InP; Optical modulation; Semiconductor lasers; Telecommunications; Vertical cavity surface emitting lasers (VCSELs)

Indexed keywords

BUTENES; CRYSTAL GROWTH; EPITAXIAL GROWTH; FIBER OPTICS; LASERS; MOLECULAR BEAM EPITAXY; PASSIVATION; SURFACE EMITTING LASERS; TUNNEL JUNCTIONS;

10 GB/ S; BENZO-CYCLO-BUTENE; BURIED TUNNEL JUNCTIONS; COPLANAR CONTACTS; DATA TRANSMISSIONS; INGAALAS; INP; MODULATION FREQUENCIES; OPEN EYE DIAGRAMS; OPTICAL MODULATION; SEMICONDUCTOR LASERS; SMALL-SIGNAL MODULATION; TELECOMMUNICATIONS; VERTICAL CAVITY SURFACE-EMITTING LASERS; VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSELS);

MODULATION;

EID: 33747807807     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.863184     Document Type: Article

References (9)

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