Temperature dependence of the relaxation resonance frequency of long-wavelength vertical-cavity lasers

IEEE Photonics Technology Letters

Volumn 17, Issue 5, 2005, Pages 944-946

  Björlin, E Staffan ^a   Geske, Jon ^a   Mehta, Manish ^a   Piprek, Joachim ^a   Bowers, John E ^a  

^a University of California   (United States)

Author keywords

Optical communication; Optical modulation; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers (VCSELs)

Indexed keywords

LIGHT MODULATION; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMAL EFFECTS;

DIFFERENTIAL GAIN; RELAXATION RESONANCE FREQUENCY; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 18944379875     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.844560     Document Type: Article

References (13)

1. I. Suemune, L. A. Coldren, M. Yamanishi, and Y. Kan, "Extremely wide modulation bandwidth in a low threshold current strained quantum well laser." Appl. Phys. Lett., vol. 53, no. 15, pp. 1378-1380, Oct. 1988.
2. K. Uomi, T. Mishima, and N. Chinone, "Ultrahigh relaxation oscillation frequency (up to 30 GHz) of highly p-doped GaAs/GaAlAs multiple quantum well lasers," Appl. Phys. Lett., vol. 51, no. 2, pp. 78-80, Jul. 1987.
3. H. Nishimoto, M. Yamaguchi, I. Mito, and K. Kobayashi, "High-frequency response for DFB LD due to a wavelength detuning effect," J. Lightw. Technol., vol. LT-5, no. 10, pp. 1399-1402, Oct. 1987.
4. S. Robert, M. Ortsiefer, J. Rosskopf, G. Böhm, C. Lauer, M. Maute, and M.-C. Amann, "Long-wavelength InP-based VCSELs with buried tunnel-junction: Properties and applications," Proc. SPIE, vol. 5364, pp. 1-15, Jun. 2004.
5. S. Nakagawa, E. Hall, G. Almuneau, J. K. Kim, D. A. Buell, H. Kroemer, and L. A. Coldren, "88 °C continuous wave operation of apertured intracavity contacted 1.55-μm vertical-cavity surface emitting lasers," Appl. Phys. Lett., vol. 78, no. 10, pp. 1337-1339, Mar. 2001.
6. R. Shau, M. Ortsiefer, J. Rosskopf, G. Bohm, F. Kohler, and M. C. Amann, "Vertical cavity surface-emitting laser diodes at 1.55 μm with large output power and high operation temperature," Electron. Lett., vol. 37, no. 21, pp. 1295-1296, Oct. 2001.
7. V. Jayaraman, M. Mehta, A. W. Jackson, S. Wu, Y. Okuno, J. Piprek, and J. E. Bowers, "High-power 1320-nm wafer-bonded VCSELs with tunnel junctions," IEEE Photon. Technol. Lett., vol. 15, no. 11, pp. 1495-1497, Nov. 2003.
8. A. Syrbu, A. Mircea, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, "l.5-mW single-mode operation of wafer-fused 1550-nm VCSELs," IEEE Photon. Technol. Lett., vol. 16, no. 5, pp. 1230-1232, May 2004.
9. P. A. Morton, T. Tanbun-Ek, R. A. Logan, P. F. Sciortino Jun, A. M. Sergent, and K. W. Wecht, "Superfast 1.55 μm DFB lasers," Electron. Lett., vol. 29, no. 16, pp. 1429-1430, Aug. 1993.
10. H. D. Summers, P. Dowd, I. H. White, and M. R. T Tan, "Calculation of differential gain and linewidth enhancement factor in 980-nm InGaAs vertical cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 7, no. 7, pp. 736-738, Jul. 1995.
11. P. Dowd, H. D. Summers, I. H. White, M. R. T. Tan, Y. M. Houng, and S. Y. Wang, "Measurement of differential gain and linewidth enhancement factor of InGaAs vertical cavity surface emitting laser," Electron. Lett., vol. 31, no. 7, pp. 557-559, Mar. 1995.
12. J. Piprek, M. Mehta, and V. Jayaraman, "Design and optimization of high-performance 1.3 μm VCSELs," in Proc. SPIE, Physics and Simulation of Optoelectronic Devices XII, Photonics West 2004, vol. 5349-49, 2004, pp. 375-384.
13. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits. New York: Wiley, 1995.