Effect of gas introduction position on substrate etching by means of Ar-dominated graphite-cathodic-arc plasma beam in μT-FAD

Thin Solid Films

Volumn 518, Issue 13, 2010, Pages 3546-3550

  Tanoue, Hideto ^a   Kamiya, Masao ^a,b   Oke, Shinichiro ^a   Suda, Yoshiyuki ^a   Takikawa, Hirofumi ^a   Hasegawa, Yushi ^c   Taki, Makoto ^c   Tsuji, Nobuhiro ^c   Ishikawa, Takeshi ^d   Yasui, Haruyuki ^e   Temmei, Shuji ^f   Takahashi, Hideo ^f  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b Itoh Optical Industrial Co Ltd   (Japan)

^c Onward Ceramic Coating Co Ltd   (Japan)

^d HITACHI LTD   (Japan)

^e INDUSTRIAL RESEARCH INSTITUTE OF ISHIKAWA   (Japan)

^f Ueki Corporation   (Japan)

Author keywords

Ar dominated plasma beam; Diamond like carbon (DLC) film; Discharge properties; Graphite cathodic vacuum arc; Small type T shaped filtered arc deposition ( T FAD) system; Substrate etching

Indexed keywords

ARC PLASMA; CATHODIC VACUUM ARCS; DIAMOND-LIKE CARBON (DLC) FILM; ETCHING RATE; GAS FLOWRATE; PLASMA BEAM; PLASMA CONDITIONS; ROUGHNESS CHANGE; SUBSTRATE ETCHING;

AERODYNAMICS; ARGON; BEAM PLASMA INTERACTIONS; CAVITY RESONATORS; ETCHING; FLOW OF GASES; GASES; GRAPHITE; PLASMA DEPOSITION; PLASMAS; SUBSTRATES; VACUUM; VACUUM APPLICATIONS;

ELECTRIC DISCHARGES;

EID: 77949437944     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.11.050     Document Type: Article

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