Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy

Journal of Applied Physics

Volumn 96, Issue 8, 2004, Pages 4416-4420

  Mantovani, V ^a   Sanguinetti, S ^a   Guzzi, M ^a   Grilli, E ^a   Gurioli, M ^b   Watanabe, K ^c   Koguchi, N ^c  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b INFM   (Italy)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE COUPLED DEVICES; CHEMICAL LASERS; DETECTORS; DIFFUSION; ELECTRONIC STRUCTURE; EXCITONS; HETEROJUNCTIONS; LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; NANOTECHNOLOGY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SELF ASSEMBLY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

LOW TEMPERATURE PHOTOLUMINESCENCE SPECTROSCOPY; QUANTUM HETEROSTRUCTURES; STRANSKI-KRASTANOW (SK) SELF-ASSEMBLING GROWTH; THERMAL ANNEALING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 7544241541     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1791756     Document Type: Article

References (25)

1. E. Moreau, I. Robert, J. M. Gerard, I. Abram, L. Manin, and V. Thierry-Mieg, Appl. Phys. Lett. 79, 2865 (2001).
2. M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z. R. Wasilewski, O. Stern, and A. Forchel, Science 291, 451 (2001).
3. K. Leosson, D. Birkedal I. Magnusdottir, W. Langbein, and J. M. Hvam, Physica E (Amsterdam) 17, 1 (2003).
4. T. Seufert, R. Weigand, G. Bacher, T. Kuemmell, A. Forchel, K. Leonardi, and D. Hommel, Appl. Phys. Lett. 76, 1872 (2000).
5. M. Bayer, O. Stern, P. Hawrylak, S. Fafard, and A. Forchel, Nature (London) 405, 923 (2000).
6. H. Htoon, H. Yu, D. Kulik, J. W. Keto, O. Baklenov, A. L. Holmes, B. G. Streetman, and C. K. Shih, Phys. Rev. B 60, 11026 (1999).
7. G. Bacher, R. Weigand, J. Seufert, V. D. Kulakovskii, N. A. Gippius, A. Forchel, K. Leonardi, and D. Hommel, Phys. Rev. Lett. 83, 4417 (1999).
8. E. Dekel, D. Gershoni, E. Ehrenfreund, J. M. Garcia, and P. M. Petroff, Phys. Rev. B 61, 11009 (2000).
9. E. Dekel, D. V. Regelman, D. Gershoni, E. Ehrenfreund, W. V. Schoenfeld, and P. M. Petroff, Phys. Rev. B 62, 11038 (2000).
10. T. Kuroda, S. Sanguinetti, M. Gurioli, K. Watanabe, F. Minami, and N. Koguchi, Phys. Rev. B 66, 121302 (2002).
11. I. Daruka and A. L. Barabasi, Phys. Rev. Lett. 79, 3708 (1997).
12. N. Koguchi, S. Takahashi, and T. Chikyow, J. Cryst. Growth 111, 688 (1991).
13. K. Watanabe, N. Koguchi, and Y. Gotoh, Jpn. J. Appl. Phys., Part 1 39, L79 (2000).
14. A. Ohtake, J. Nakamura, S. Tsukamoto, N. Koguchi, and A. Natori, Phys. Rev. Lett. 89, 206102 (2002).
15. Y. Horikoshi, M. Kawashima, and H. Yamaguchi, Jpn. J. Appl. Phys., Part 1 27, 169 (1988).
16. L. Pavesi and M. Guzzi, J. Appl. Phys. 75, 4779 (1994).
17. J. Cibert, P. M. Petroff D. J. Werder, S. J. Pearton, A. C. Gossard, and J. H. English, Appl. Phys. Lett. 49, 223 (1986).
18. J. Crank, The Mathematics of Diffusion (Clarendon, Oxford, 1955).
19. J. Y. Marzin and G. Bastard, Solid State Commun. 92, 437 (1994).
20. M. Califano and P. Harrison, Phys. Rev. B 61, 10959 (2000).
21. C. N. Yeh, L. E. McNail, L. J. Blue, and T. Daniels-Race, J. Appl. Phys. 77, 4541 (1995).
22. K. Watanabe, S. Tsukamoto, Y. Gotoh, and N. Koguchi, J. Cryst. Growth 227-228, 1073 (2001).
23. T. E. Schlesinger and T. Kuech, Appl. Phys. Lett. 49, 519 (1986).
24. D. G. Deppe and N. Holonyak, J. Appl. Phys. 64, R93 (1988).
25. I. Shtrichman, D. Gershoni, and R. Kalish, Phys. Rev. B 56, 1509 (1997).