Rapid thermal annealing effects on self-assembled quantum dot and quantum ring structures

Journal of Applied Physics

Volumn 104, Issue 11, 2008, Pages

  Sanguinetti, S ^a   Mano, T ^b   Gerosa, A ^a   Somaschini, C ^a   Bietti, S ^a   Koguchi, N ^a   Grilli, E ^a   Guzzi, M ^a   Gurioli, M ^c   Abbarchi, M ^c  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c UNIVERSITY OF FLORENCE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; ELECTRONIC STRUCTURE; GALLIUM; HEAT TREATMENT; LIGHT EMISSION; LUMINESCENCE; NANORINGS; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; QUANTUM ELECTRONICS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING;

CARRIER DYNAMICS; DEFECTIVITY; DROPLET EPITAXIES; GAASALGAAS; INTER DIFFUSIONS; LOW TEMPERATURES; PHOTOLUMINESCENCE BANDS; PHOTOLUMINESCENCE EFFICIENCIES; POSTGROWTH THERMAL ANNEALING; QUANTUM DOTS; QUANTUM RINGS; SIMPLE MODELS; THERMAL ANNEALING; THERMAL TREATMENTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 58149229182     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3039802     Document Type: Article

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