Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition

Applied Surface Science

Volumn 244, Issue 1-4, 2005, Pages 377-380

  Chen, Z Q ^a   Yamamoto, S ^a   Kawasuso, A ^a   Xu, Y ^a   Sekiguchi, T ^b  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Film; Pulsed laser deposition; ZnO

Indexed keywords

CONCENTRATION (PROCESS); EPITAXIAL GROWTH; POSITRONS; PULSED LASER DEPOSITION; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

HOMOEPITAXIAL LAYERS; OPTICAL QUALITY; POSITRON ANNIHILATION MEASUREMENTS; RAMAN MEASUREMENTS;

THIN FILMS;

EID: 15844411338     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.10.093     Document Type: Conference Paper

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