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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 27, Issue 3, 2009, Pages 1161-1164

Low-resistance, highly transparent, and thermally stable Ti/ITO Ohmic contacts to n-GaN

(4) Guo, H a Brown, K a Korakakis, D a Cao, X A a

a West Virginia University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; ELECTRIC CONTACTORS; INDIUM COMPOUNDS; OHMIC CONTACTS; PLASMA APPLICATIONS; THERMODYNAMIC STABILITY; TIN; TIN OXIDES; TRANSPARENCY;

ELECTRICAL CHARACTERISTIC; HIGH TRANSMITTANCE; INDIUM TIN OXIDE; ITO CONTACT; LOW RESISTANCE; OPTICAL TRANSPARENCY; PLASMA TREATMENT; POST DEPOSITION ANNEALING; PRE-DEPOSITION; SCHOTTKY CHARACTERISTICS; SPECIFIC CONTACT RESISTANCES; THERMALLY STABLE;

GALLIUM NITRIDE;

EID: 77949356213 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3136922 Document Type: Conference Paper

Times cited : (10)

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