Fabrication and characterization of molecular scale field-effect transistors

Journal of Materials Chemistry

Volumn 20, Issue 12, 2010, Pages 2305-2309

  Cao, Lingchao ^a,b   Chen, Shiyan ^a   Wei, Dacheng ^a   Liu, Yunqi ^a   Fu, Lei ^a   Yu, Gui ^a   Liu, Hongming ^c   Liu, Xinyu ^c   Wu, Dexing ^c  

^a INSTITUTE OF CHEMISTRY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BUILDING BLOCKES; BURIED GATES; DEVICE FABRICATIONS; ELECTRICAL MEASUREMENT; ELECTRODE PAIRS; ELECTRODE STRUCTURE; FIELD-EFFECT MOBILITIES; FUNCTIONAL MOLECULES; GAP SIZE; MOLECULAR DEVICE; MOLECULAR LITHOGRAPHY; MOLECULAR SCALE; MOLECULE LAYERS; ORIENTATION CONTROL; PHTHALOCYANINE DERIVATIVES; SCALING DOWN; SELF-ASSEMBLED; SOURCE AND DRAIN ELECTRODES; TOPDOWN;

ELECTRODES; FABRICATION; LITHOGRAPHY; MESFET DEVICES; MOLECULAR ELECTRONICS; MOLECULES;

FIELD EFFECT TRANSISTORS;

EID: 77949342553     PISSN: 09599428     EISSN: 13645501     Source Type: Journal    
DOI: 10.1039/b922958b     Document Type: Article

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