MOVPE homoepitaxial growth on vicinal GaN(0001) substrates

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 5, 2005, Pages 727-731

  Xu, Xueping ^a   Vaudo, Robert P ^a   Flynn, Jeffery ^a   Dion, Joe ^a   Brandes, George R ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C-PLANE SUBSTRATES; HOMOEPITAXIAL GROWTH; SILICON-DOPED FILMS;

DOPING (ADDITIVES); EPITAXIAL GROWTH; MAGNESIUM PRINTING PLATES; METALLORGANIC VAPOR PHASE EPITAXY; MICROSTRUCTURE; MORPHOLOGY; SILICON; SUBSTRATES; THIN FILMS;

GALLIUM NITRIDE;

EID: 25444483591     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200461521     Document Type: Conference Paper

References (7)

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4. See, for example, T. Kimoto, et al., Appl. Phys. Lett. 66, 3645 (1995).
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7. R. P. Vaudo, X. Xu, A. Salant, J. Malcarne, and G. R. Brandes, phys. stat. sol. (a) 200, 18 (2003).