CMOS-integrated high-speed MSM germanium waveguide photodetector

Optics Express

Volumn 18, Issue 5, 2010, Pages 4986-4999

  Assefa, Solomon ^a   Xia, Fengnian ^a   Bedell, Stephen W ^a   Zhang, Ying ^a   Topuria, Teya ^b   Rice, Philip M ^b   Vlasov, Yurii A ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; FIELD EFFECT TRANSISTORS; GERMANIUM; OPTOELECTRONIC DEVICES; WAVEGUIDES;

GERMANIUM WAVEGUIDE PHOTODETECTORS; GERMANIUM-ON-INSULATOR; HIGH-SPEED; MONOLITHIC INTEGRATION; RAPID MELT GROWTH; SINGLE-CRYSTALLINE; SOURCE-DRAIN IMPLANTS;

PHOTODETECTORS;

EID: 77749298286     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.004986     Document Type: Article

References (30)

1. G. Masini, S. Sahni, G. Capellini, J. Witzens, and C. Gunn, "Waveguide Photodetectors Integrated in a CMOS Process," Adv. Opt. Technol. 2008, 196572 (2008).
2. T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, "31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate," Opt. Express 15(21), 13965-13971 (2007).
3. L. Vivien, J. Osmond, J. M. Fédéli, D. Marris-Morini, P. Crozat, J. F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, "42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide," Opt. Express 17(8), 6252-6257 (2009).
4. D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, "High performance, waveguide integrated Ge photodetectors," Opt. Express 15(7), 3916-3921 (2007).
5. L. Chen, and M. Lipson, "Ultra-low capacitance and high speed germanium photodetectors on silicon," Opt. Express 17(10), 7901-7906 (2009).
6. J. F. Liu, D. Pan, S. Jongthammanurak, D. Ahn, C. Y. Hong, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, and D. M. Gill, "Waveguide-Integrated Ge p-i-n Photodetectors on SOI Platform," in Proc. 3rd IEEE Int. Conf. Group IV Photon., 173-175 (2006)
7. J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, S. M. F. Tan, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, "Low-voltage high-speed (18GHz/lV) evanescent-coupled thin-film-Ge lateral PIN photodetectors integrated on Si waveguide," IEEE Photon. Technol. Lett. 20(17), 1485-1487 (2008).
8. Y. Liu, M. D. Deal, and J. D. Plummer, "High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrate," Appl. Phys. Lett. 84(14), 2563-2565 (2004).
9. M. Miyao, K. Toko, T. Tanaka, and T. Sadoh, "High-quality single-crystal Ge on insulator by rapid-melting-growth,"Appl. Phys. Lett. 95, 02215-1 - 02215-2223 (2009).
10. M. Miyao, T. Tanaka, K. Toko, and M. Tanaka, "Giant Ge-on-Insulator formation by Si-Ge mixing-triggered liquid-phase epitaxy," Appl. Phys. Express 2, 045503-1 - 045503-3 (2009).
11. S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria, P. M. Rice, and Y. A. Vlasov, "CMOS-Integrated 40GHz germanium waveguide photodetector for on-chip optical interconnects," Optical Fiber Communication Conference (OFC), OMR4 (2009).
12. S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria, P. M. Rice, and Y. A. Vlasov, "CMOS-Integrated high-speed germanium waveguide photodetector for on-chip optical interconnects," Conference on Lasers and Electro Optics (CLEO), CTuV1 (2009).
13. G. Dehlinger, S. McNab, F. Xia, and Y. A. Vlasov, "Waveguide photodetector," US patent US7515793, filed February 2006.
14. S. Assefa, S. Bedell, F. Xia, and Y. A. Vlasov, "Optoelectronic Device with Germanium Photodetector," pending US patent 11/925170, filed October 2007.
15. S. Assefa, J. V. Campenhout, J. O. Chu, W. M. J. Green, Y. H. Kim, M. M. Frank, G. G. Totir, Y. A. Vlasov, and Y. Zhang, "Suspended germanium photodetector for silicon waveguide," pending US patent 12/191687, filed August 2008.
16. http://www.photond.com/products/fimmwave.htm
17. http://www.ansoft.com/products/em/maxwell/
18. L. Colace, G. Masini, and G. Assanto, "Ge-on-Si approaches to the detection of near-infrared light," IEEE J. Quantum Electron. 35(12), 1843-1852 (1999).
19. F. Xia, L. Sekaric, and Y. Vlasov, "Ultracompact optical buffers on a silicon chip," Nat. Photonics 1(1), 65-71 (2007).
20. T. Shoji, T. Tsuchizawa, T. Watanabe, K. Yamada, and H. Morita, "Low loss mode size converter from 0.3mm square Si waveguides to singlemode fiber," Electron. Lett. 38(25), 1669-1670 (2002).
21. Y. A. Vlasov, and S. J. McNab, "Losses in single-mode silicon-on-insulator strip waveguides and bends," Opt. Express 12(8), 1622-1631 (2004).
22. T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, and T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, "Microphotonic devices based on silicon microfabrication technology," IEEE J. Sel. Top. Quantum Electron. 11, 232-240 (2005).
23. S. Assefa, C. Jahnes, and Y. Vlasov, "CMOS compatible integrated dielectric optical waveguide coupler and fabrication", pending US patent 12/164580, filed July2008.
24. S. M. Sze, D. J. Coleman, Jr., and A. Loya, "Current transport in metal-semiconductor-metal (MSM) structures," Solid-State Electron. 14(12), 1209-1218 (1971).
25. M. Kobayashi, A. Kinoshita, K. C. Saraswat, H. S. Philip Wong, and Y. Nishi, "Fermi-level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application," J. Appl. Phys. 105, 023702-1-023702-23706 (2009).
26. C. O. Chui, A. K. Okyay, and K. C. Saraswat, "Effective dark current suppression with asymmetric MSM photodetectors in Group IV semiconductors, " IEEE Photon. Technol. Lett. 15(11), 1585-1587 (2003).
27. K. Ang, S. Zhu, M. Yu, G. Lo, and D. Kwong, "High-performance waveguided Ge-on-SOI metal-semiconductor-metal photodetectors with novel Silicon-Carbon (Si:C) Schottky barrier enhancement layer," IEEE Photon. Technol. Lett. 20(9), 754-756 (2008).
28. S. J. Koester, J. D. Schaub, G. Dehlinger, and J. O. Chu, "Germanium-on-SOI infrared detectors for integrated photonic applications," IEEEJ. Select. Quantum Electron. 12(6), 1489-1502 (2006).
29. T. Tsuchiya, K. Goto, M. Sakuraba, T. Matsuura, and J. Murota, "Drain leakage current and instability of drain current in Si/SiuGex MOSFETs," Thin Solid Films 369(1-2), 379-382 (2000).
30. S. M. Sze, and K. K. Ng, Physics of Semiconductor Devices, (Wiley, New Jersey, 2007), Chap. 3.