Low-voltage high-speed (18 GHz/1 V) evanescent-coupled thin-film-Ge lateral PIN photodetectors integrated on Si waveguide

IEEE Photonics Technology Letters

Volumn 20, Issue 17, 2008, Pages 1485-1487

  Wang, J ^a,b   Loh, W Y ^a   Chua, K T ^a   Zang, H ^a,b   Xiong, Y Z ^a   Tan, S M F ^a   Yu, M B ^a   Lee, S J ^b   Lo, G Q ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Evanescent coupled; Lateral p i n; Photodetector; Waveguide

Indexed keywords

1550 NM; COUPLING LOSS; DEVICE PERFORMANCE; EVANESCENT-COUPLED; GE DETECTORS; HIGH-SPEED; INTERNAL QUANTUM EFFICIENCY; LOW-VOLTAGE; NARROW WIDTH; P-I-N PHOTODETECTORS; PARASITIC EFFECT; RESPONSIVITY; SI-WAVEGUIDE; SIGE BUFFER; WAVEGUIDE LOSS;

GERMANIUM; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SILICON;

WAVEGUIDES;

EID: 72049132160     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.928087     Document Type: Article

References (14)

1. L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, "Electronic-photonic integrated circuits on theCMOSplatform," Proc. SPIE, vol.6125, pp. 612502-612511, Mar. 2006.
2. T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, "31 GHz Ge n-i-p waveguide photodetectors on silicon- on-insulator substrate," Opt. Express, vol.15, pp. 13965-13971, Oct. 2007.
3. T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, "40 Gb/s Ge-on-SOIwaveguide photodetectors by selective Ge growth," in Conf. Optical Fiber Communications (OFC 2008), San Diego, CA, Feb. 2008, Paper OMK2.
4. S. J. Koester, C. L. Schow, L. Schares, G. Dehlinger, J. D. Schaub, F. E. Doany, and R. A. John, "Ge-on-SOI-Detector/Si-CMOS-Amplifier receivers for high-performance optical-communication applications," J. Lightw. Technol., vol.25, no.1, pp. 46-57, Jan. 2007.
5. W. Y. Loh, J. Wang, J. D. Ye, R. Yang, H. S. Nguyen, K. T. Chua, J. F. Song, T. H. Loh, Y. Z. Xiong, S. J. Lee, M. B. Yu, G. Q. Lo, and D. L. Kwong, "Impact of local strain from selective-epitaxial-germanium with thin Si/SiGe-buffer for high-performance p-i-n photodetector with low-thermal budget," IEEE Electron Device Lett., vol.28, no.11, pp. 984-986, Nov. 2007.
6. T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, and D. L.Kwong, "Ultrathin lowtemperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition," Appl. Phys. Lett., vol.90, p. 092108, Feb. 2007.
7. L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, "High speed and high responsivity germanium photodetector integrated in a silicon-on-insulator microwaveguide," Opt. Express, vol.15, pp. 9843-9848, Jul. 2007.
8. D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, "High performance waveguide integrated Ge photodetectors," Opt. Express, vol.15, pp. 3916-3921, Apr. 2007.
9. S. J. Koester, L. Schares, C. L. Schow, G. Dehlinger, and R. A. John, "Temperature-dependent analysis of Ge-on-SOI photodetectors and receiver," in Proc. Group IV Photonics Conf., Sep. 2006, pp. 179-181.
10. J. Wang et al., "Evanescent-coupled Ge-PIN photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical PIN configurations," IEEE Electron Device Lett., accepted for publication.
11. J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. Danielson, J. Michel, and L. C. Kimerling, "Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications," Appl. Phys. Lett., vol.87, p. 011110, Jul. 2005.
12. M. Jutzi, M. Berroth, G. Wohl, M. Oehme, and E. Kasper, "Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth," IEEE Photon. Technol. Lett., vol.17, no.7, pp. 1510-1512, Jul. 2005.
13. Jacoboni, F. Nava, C. Canali, and G. Ottaviani, "Electron dirft velocity and diffusivity in germanium," Phys. Rev. B, vol.24, pp. 1014-1026, Jul. 1981.
14. E. J. Ryder, "Mobility of holes and electrons in high electric fields," Phys. Rev., vol.90, pp. 766-769, Jun. 1953.