Nonuniformity of electron density in In-rich InGaN films deduced from electrolyte capacitance-voltage profiling

Applied Physics Letters

Volumn 96, Issue 8, 2010, Pages

  Knubel, A ^a   Polyakov, V M ^a   Kirste, L ^a   Aidam, R ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE PROFILING; CAPACITANCE-VOLTAGE TECHNIQUES; CONDUCTION BAND EDGE; DEFECT CONCENTRATIONS; ELECTRON DENSITIES; FITTING RESULTS; MEASURED DATA; MODEL-BASED; MOTT-SCHOTTKY PLOTS; NONUNIFORMITY; POISSON SOLVERS; SUBSURFACE LAYER; SURFACE ACCUMULATION; SURFACE ELECTRON ACCUMULATION;

ELECTROLYTES; ELECTRON MOBILITY; GALLIUM;

CAPACITANCE;

EID: 77749279793     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3319511     Document Type: Article

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