Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

Journal of Semiconductors

Volumn 31, Issue 3, 2010, Pages

  Yongliang, Li ^a   Qiuxia, Xu ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

HfSiON; High k; Interfacial layer; Wet etching

Indexed keywords

COULOMB SCATTERING; ETCH RATES; ETCH SELECTIVITY; ETCHED SURFACE; HF SOLUTIONS; HFSION; HFSION FILM; HIGH-K DIELECTRIC; HYDROPHOBIC NATURE; INTERFACE LAYER; INTERFACIAL LAYER; NEW HIGH; PLASMA TREATMENT; SI SUBSTRATES; SI-N BONDS; WET CHEMISTRY; WET ETCH RATE;

CARRIER MOBILITY; HAFNIUM COMPOUNDS; HYDROFLUORIC ACID; PLASMA APPLICATIONS; SILICON;

WET ETCHING;

EID: 77749255191     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/31/3/036001     Document Type: Article

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