Temperature dependence of the current gain in power 4H-SiC NPN BJTs

IEEE Transactions on Electron Devices

Volumn 53, Issue 5, 2006, Pages 1245-1249

  Ivanov, Pavel A ^a   Levinshtein, Michael E ^a   Agarwal, Anant K ^b   Krishnaswami, Sumi ^b   Palmour, John W ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

Bipolar junction transistors (BJTs); Current gain; Silicon carbide

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC POTENTIAL; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

BIPOLAR JUNCTION TRANSISTORS (BJTS); CURRENT GAIN; TEMPERATURE DEPENDENCE;

BIPOLAR TRANSISTORS;

EID: 33646108114     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.872701     Document Type: Article

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