(Ge, Mn): A ferromagnetic semiconductor for spin injection in silicon

International Journal of Nanotechnology

Volumn 7, Issue 4-8, 2010, Pages 575-590

  Jamet, M ^a   Devillers, T ^a   Yu, I S ^a   Barski, A ^a   Bayle Guillemaud, P ^a   Rothman, J ^b   Favre Nicolin, V ^a   Tardif, S ^c   Cherifi, S ^c   Cibert, J ^c   Grenet, L ^a   Noe P ^a   Calvo, V ^a   Warin, P ^a   Hartmann, J M ^b   Rodmacq, B ^d   Auffret, S ^d   Samson, Y ^a  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

^c LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^d UMR 8191   (France)

Author keywords

Diluted magnetic semiconductors; Ferromagnetism; Germanium; Molecular beam epitaxy; Nanocolumns; Silicon; Spin injection; Spintronics

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CHEMICAL ANALYSIS; DILUTED MAGNETIC SEMICONDUCTORS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GERMANIUM; GERMANIUM COMPOUNDS; GROWTH TEMPERATURE; III-V SEMICONDUCTORS; LIGHT EMITTING DIODES; MANGANESE; MICROELECTRONICS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHASE SEPARATION; SILICON; SPINTRONICS;

ELECTRICAL SPIN INJECTION; FERROMAGNETIC SEMICONDUCTOR; HALF-METALLIC FERROMAGNETS; LOW TEMPERATURE MOLECULAR BEAM EPITAXY; NANO-COLUMNS; SILICON TECHNOLOGIES; SPIN INJECTION; SPIN LIGHT EMITTING DIODE;

SEMICONDUCTING SILICON;

EID: 77649116924     PISSN: 14757435     EISSN: None     Source Type: Journal    
DOI: 10.1504/IJNT.2010.031734     Document Type: Article

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