Dopant segregation and giant magnetoresistance in manganese-doped germanium

Physical Review B - Condensed Matter and Materials Physics

Volumn 75, Issue 20, 2007, Pages

  Li, A P ^a   Zeng, C ^b   Van Benthem, K ^a   Chisholm, M F ^a   Shen, J ^a   Nageswara Rao, S V S ^c,d   Dixit, S K ^c   Feldman, L C ^a,c,d   Petukhov, A G ^e   Foygel, M ^e   Weitering, H H ^a,b  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF TENNESSEE   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d VANDERBILT UNIVERSITY   (United States)

^e SOUTH DAKOTA SCHOOL OF MINES AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34347342751     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.75.201201     Document Type: Article

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25. Polaronic transport models considered in these papers can also account for positive MR but we could not obtain reasonable data fits in the temperature range 50-200 K using these models.