Gamma-ray irradiation effects on the interface states of MIS structures

Sensors and Actuators, A: Physical

Volumn 151, Issue 2, 2009, Pages 168-172

  Tataroglu A ^a   Altindal, Ş ^a  

^a GAZI UNIVERSITY   (Turkey)

Author keywords

C V and G V characteristics; Gamma ray effects; Interface states; MIS structures; Series resistance

Indexed keywords

BARRIER HEIGHTS; BEFORE AND AFTER; C-V MEASUREMENTS; CAPACITANCE VOLTAGES; CONDUCTANCE VALUES; DEPLETION LAYERS; FORWARD BIAS; GAMMA-RAY EFFECTS; GAMMA-RAY IRRADIATIONS; HIGH FREQUENCIES; INTERFACE STATES; MEASUREMENT METHODS; MIS STRUCTURES; RADIATION DOSE; RADIATION-INDUCED DAMAGES; REAL CAPACITANCES; REVERSE BIAS; ROOM TEMPERATURES; SERIES RESISTANCE; TOTAL DOSE RADIATION HARDNESS;

CAPACITANCE; DOSIMETRY; GAMMA RAYS; IRRADIATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON COMPOUNDS; STARS; SWITCHING CIRCUITS;

RADIATION;

EID: 64549114906     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2009.02.035     Document Type: Article

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