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Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 17-19

Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation

Author keywords

Al doped 4H SiC; Deep acceptor; Electron irradiation; Radiation damage; Reduction in hole concentration

Indexed keywords

ALUMINUM; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; ELECTRON IRRADIATION; IRRADIATION; RADIATION DAMAGE;

EID: 30344478837     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.015     Document Type: Conference Paper
Times cited : (3)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.