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Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 17-19
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Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation
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Author keywords
Al doped 4H SiC; Deep acceptor; Electron irradiation; Radiation damage; Reduction in hole concentration
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Indexed keywords
ALUMINUM;
DOPING (ADDITIVES);
ELECTRON ENERGY LEVELS;
ELECTRON IRRADIATION;
IRRADIATION;
RADIATION DAMAGE;
ACCEPTOR DENSITY;
AL-DOPED 4H-SIC;
DEEP ACCEPTOR;
ELECTRON ENERGY;
REDUCTION IN HOLE CONCENTRATION;
SILICON CARBIDE;
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EID: 30344478837
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2005.10.015 Document Type: Conference Paper |
Times cited : (3)
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References (8)
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