The effect of boron doping and gamma irradiation on the structure and properties of microwave chemical vapor deposited boron-doped diamond films

Journal of Materials Research

Volumn 24, Issue 4, 2009, Pages 1498-1512

  Gupta, S ^a   Muralikiran, M ^b   Farmer, J ^a   Cao, L R ^c   Downing, R G ^c  

^a UNIVERSITY OF MISSOURI   (United States)

^b University of Missouri   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATIONS; ACTIVE ACCEPTORS; BOROCARBIDE; BORON CONCENTRATIONS; BORON-DOPED DIAMOND FILMS; BORON-DOPED DIAMONDS; BORON-DOPING; CHEMICAL VAPOR DEPOSITED; COLD NEUTRONS; COMPTON; DIAMOND SURFACES; DIAMOND THIN FILMS; ELECTRICAL MEASUREMENT TECHNIQUES; ELECTRICAL PROPERTIES; ELECTRONIC BEHAVIORS; ELECTRONIC DEVICES; FILM DEPOSITIONS; GAMMA IRRADIATIONS; HYDROGEN MIGRATIONS; MATERIAL PROCESSING; MICRO-RAMAN SPECTROSCOPIES; MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITIONS; POST IRRADIATIONS; SCATTERED ELECTRONS; STRUCTURE AND PROPERTIES; X- RAY DIFFRACTIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; BORON; BORON CARBIDE; CARBON NANOTUBES; CHEMICAL MODIFICATION; CHEMICAL VAPOR DEPOSITION; DEPTH PROFILING; DESORPTION; DIAMOND CUTTING TOOLS; DIAMONDS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; GAMMA RAYS; GRAIN BOUNDARIES; HYDROGEN; IRRADIATION; MICROWAVE IRRADIATION; PASSIVATION; PLASMA DEPOSITION; RADIATION; SCANNING ELECTRON MICROSCOPY; SPECTRUM ANALYSIS; THIN FILMS; VAPORS; X RAY PHOTOELECTRON SPECTROSCOPY;

DIAMOND FILMS;

EID: 65349112587     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2009.0170     Document Type: Article

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