Enhancement of light extraction in GaN based LED structures using TiO2 nano-structures

Solid-State Electronics

Volumn 54, Issue 4, 2010, Pages 484-487

  Yoon, Kyung Min ^a   Yang, Ki Yeon ^a   Byeon, Kyeong Jae ^a   Lee, Heon ^a  

^a Korea University   (South Korea)

Author keywords

Light emitting diode (LED); Nano pattern; Photoluminescence; Photon extraction efficiency; Sol imprint; TiO2

Indexed keywords

GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; IMPRINTING PROCESS; INDIUM TIN OXIDE; LIGHT EXTRACTION; LIGHT-EXTRACTION EFFICIENCY; NANO PATTERN; PHOTON EXTRACTION EFFICIENCY; PLASMA-INDUCED DAMAGE; RESIDUAL LAYERS; TIO;

DIODES; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; PHOTOLUMINESCENCE; PHOTONS; PHYSICAL OPTICS; REFRACTIVE INDEX; SILICONES; SOLS; TIN; TITANIUM COMPOUNDS; WATER ANALYSIS;

LIGHT EMITTING DIODES;

EID: 77349111720     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.01.004     Document Type: Article

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