Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction

Materials Science and Engineering: B

Volumn 163, Issue 3, 2009, Pages 170-173

  Hong, Eun Ju ^a   Byeon, Kyeong Jae ^a   Park, Hyoungwon ^a   Hwang, Jaeyeon ^a   Lee, Heon ^a   Choi, Kyungwoo ^b   Jung, Gun Young ^c  

^a Korea University   (South Korea)

^b Korea Institute of Nuclear Safety (KINS)   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

GaN; Green LED; Moth eye structure; Nanoimprint lithography; Photoluminescence; Photon extraction efficiency

Indexed keywords

EFFICIENCY; EXTRACTION; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDUCTIVELY COUPLED PLASMA; LIGHT EMITTING DIODES; NANOIMPRINT LITHOGRAPHY; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS;

CLADDING LAYER; GAN LAYERS; GAN-BASED LIGHT-EMITTING DIODES; GREEN LIGHT EMITTING DIODES; INDUCTIVELY-COUPLED PLASMA; LIGHT EXTRACTION; LIGHTEMITTING DIODE; MOTH-EYE STRUCTURE; PHOTON EXTRACTION EFFICIENCY; UV IMPRINT;

PHOTOLUMINESCENCE;

EID: 67650269389     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2009.05.018     Document Type: Article

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