Etching of 4° and 8° 4h-sic using various hydrogen-propane mixtures in a commercial hot-wall cvd reactor

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 513-516

  Lew, Kok Keong ^a   Vanmil, Brenda L ^a   Myers Ward, Rachael L ^a   Holm, Ronald T ^a   Eddy, Charles R ^a   Gaskill, D Kurt ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Hot wall chemical vapor deposition; Hydrogen propane etching; Off oriented; Step bunching; Surface morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ETCHING; GROWTH TEMPERATURE; HYDROGEN; PROPANE; SILICON CARBIDE; SUBSTRATES; SURFACE MORPHOLOGY;

4H-SIC SUBSTRATE; HOT WALL CHEMICAL VAPOR DEPOSITION; HYDROGEN ETCHING; NOMARSKI MICROSCOPY; OFF-ORIENTED; PROPANE MIXTURES; STEP BUNCHING; SURFACE DAMAGES;

MORPHOLOGY;

EID: 38449109044     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.513     Document Type: Conference Paper

References (9)

1. H. Matsunami and T. Kimoto: Mater. Sci. Eng. Reports A Vol. R20 (1997), p. 125.
2. J.A. Cooper, Jr.: IEEE Aerospace Conference Proceedings Vol. 1073 (2004), p. 2507.
3. R.E. Stahlbush, M.E. Twigg, K.G. Irvine, J.J. Sumakeris, T.P. Chow, P.A. Losee, L. Zhu, Y. Tang, W. Wang: Mater. Sci. Forum Vol. 457 (2004), p. 533.
4. A.K. Agarwal, S. Seshadri, J.B. Casady, S.S. Mani, M.F. MacMillan, N. Saks, A.A. Burk, Augustine, V. Balakrishna, P.A. Sanger, C.D. Brandt, and R. Rodrigues: Diamond and Related Materials Vol. 8 (1999), p. 295.
5. C. Hallin, F. Owman, P. Mårtensson, A. Ellison, A. Konstantinov, O. Kordina, and E. Janzén: Cryst. Growth Vol. 181 (1997), p. 241.
6. T. Kimoto, A. Itoh, H. Matsunami, and T. Okano: J. Appl. Phys. Vol. 81 (1997), p. 3494.
7. K. Wada, T. Kimoto, K. Nishikawa, and H. Matsunami: J. Cryst. Growth Vol. 291 (2006), p. 370.
8. H. Nakagawa, S. Tanaka, and I. Suemune: Phys. Rev. Lett. Vol. 91 (2003), p226107-1.
9. W. Chen and M.A. Capano: J. Appl. Phys. Vol. 98 (2005), p. 114907-1.