Amorphous-to-crystalline transition of silicon-incorporated anodic ZrO2 and improved dielectric properties

Electrochimica Acta

Volumn 55, Issue 9, 2010, Pages 3144-3151

  Koyama, S ^a   Aoki, Y ^a   Nagata, S ^b   Kimura, H ^b   Habazaki, H ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Amorphous to crystalline transition; Anodic oxide; Dielectric properties; Ionic transport; ZrO2 SiO2

Indexed keywords

AMMONIUM PENTABORATE ELECTROLYTE; AMORPHOUS LAYER; AMORPHOUS-TO-CRYSTALLINE TRANSITION; ANODIC FILMS; ANODIC OXIDE FILM; ANODIC OXIDES; CRYSTALLINE LAYERS; CRYSTALLINE OXIDES; FORMATION VOLTAGE; GLOW-DISCHARGE OPTICAL EMISSION SPECTROSCOPY; HIGH TEMPERATURE; IONIC TRANSPORTS; SI ALLOYS; SILICON CONTENTS; TETRAGONAL PHASE; ZIRCONIUM OXIDE;

AMMONIUM COMPOUNDS; AMORPHOUS FILMS; CRYSTALLINE MATERIALS; ELECTROCHEMICAL CORROSION; ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; EMISSION SPECTROSCOPY; GLOW DISCHARGES; IONIC CONDUCTION; LIGHT TRANSMISSION; OPTICAL EMISSION SPECTROSCOPY; OXIDE FILMS; PERMITTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON ALLOYS; SILICON COMPOUNDS; SILICON OXIDES; TRANSMISSION ELECTRON MICROSCOPY; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

AMORPHOUS SILICON;

EID: 77049119166     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2010.01.063     Document Type: Article

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