Influence of silicon on the growth of barrier-type anodic films on titanium

Electrochimica Acta

Volumn 52, Issue 24, 2007, Pages 6834-6840

  Tanvir, M Tauseef ^a   Fushimi, K ^a   Shimizu, K ^b   Nagata, S ^c   Skeldon, P ^d   Thompson, G E ^d   Habazaki, H ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

^b KEIO UNIVERSITY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

Amorphous to crystalline transition; Anodic oxide; Anodic titania; Ionic transport

Indexed keywords

ANODIC OXIDATION; CURRENT DENSITY; FILM GROWTH; PHASE TRANSITIONS; TITANIUM; VOLTAGE CONTROL;

AMORPHOUS-TO-CRYSTALLINE TRANSITION; ANODIC OXIDES; ANODIC TITANIA; IONIC TRANSPORTS;

AMORPHOUS SILICON;

EID: 34447103600     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2007.04.113     Document Type: Article

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