Excitation and pressure effects on photoluminescence from dislocation engineered silicon material

Physica Status Solidi (B) Basic Research

Volumn 244, Issue 1, 2007, Pages 402-406

  Ishibashi, Y ^a,b   Kobayashi, T ^a   Prins, A D ^c   Nakahara, J ^b   Lourenco, M A ^c   Gwilliam, R M ^c   Homewood, K P ^c  

^a KOBE UNIVERSITY   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33847045605     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200672525     Document Type: Conference Paper

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