Morphological influence of the beam overlap in focused ion beam induced deposition using raster scan

Microelectronic Engineering

Volumn 87, Issue 5-8, 2010, Pages 972-976

  Kim, Chung Soo ^a   Kim, Hyung Jung ^a   Ahn, Sung Hoon ^b   Jang, Dong Young ^c  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

^c Seoul National University of Science and Technology   (South Korea)

Author keywords

Beam overlap; Carbon; FIBID; Phenanthrene gas; Raster scan

Indexed keywords

BEAM OVERLAP; DELOCALIZATIONS; FIBID; FOCUSED ION BEAM INDUCED DEPOSITION; GAS MOLECULES; LOCAL DEPOSITION; PIXEL SIZE; PROCESSING TIME; RANGE EFFECT; RASTER SCANS; SPUTTERING PROCESS; SURFACE ATOMS;

ANTHRACENE; FOCUSED ION BEAMS; IONS; MICROELECTRONICS;

MOLECULES;

EID: 76949094362     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.131     Document Type: Article

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