Determination of dielectric constant and loss of high-K thin films in the microwave frequencies

Measurement: Journal of the International Measurement Confederation

Volumn 43, Issue 4, 2010, Pages 556-562

  Sudheendran, K ^a   Pamu, D ^a   Ghanashyam Krishna, M ^a   James Raju, K C ^a  

^a UNIVERSITY OF HYDERABAD   (India)

Author keywords

Cavity perturbation; Dielectric constant; Microwave characterization; Thin films

Indexed keywords

BOROSILICATE GLASS SUBSTRATES; CAVITY PERTURBATION; CAVITY PERTURBATION TECHNIQUE; DIELECTRIC CONSTANTS; DIELECTRIC LOSS TANGENT; LOW K DIELECTRICS; MICROWAVE CHARACTERIZATION; MICROWAVE FREQUENCY REGION; OXYGEN PARTIAL PRESSURE; RECTANGULAR CAVITY; SPUTTERING ATMOSPHERE; THIN-FILM DIELECTRICS; TIO;

BOROSILICATE GLASS; DIELECTRIC LOSSES; MICROWAVE FREQUENCIES; OXYGEN; PARTIAL PRESSURE; PERMITTIVITY; PERTURBATION TECHNIQUES; POSITIVE IONS; THIN FILMS;

DIELECTRIC MATERIALS;

EID: 76849090025     PISSN: 02632241     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.measurement.2009.12.026     Document Type: Article

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