Thickness and annealing effects on the optoelectronic properties of ZnS films

Journal of Physics D: Applied Physics

Volumn 43, Issue 7, 2010, Pages

  Mohamed, S H ^a,b   El Hagary, M ^a,c   Emam Ismail, M ^a,d  

^a QASSIM UNIVERSITY   (Saudi Arabia)

^b Sohag University   (Egypt)

^c Helwan University   (Egypt)

^d Ain Shams University   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

AIR ATMOSPHERE; ANNEALING EFFECTS; ANNEALING TEMPERATURES; ANNEALING TIME; CRYSTALLINITIES; ELECTRON BEAM EVAPORATION; FIGURE OF MERIT; GLASS SUBSTRATES; OPTOELECTRONIC PROPERTIES; TRANSPARENT CONDUCTIVE; VISIBLE RANGE; ZNO; ZNS FILMS;

DIFFRACTION; ELECTRON BEAMS; HOLOGRAPHIC INTERFEROMETRY; REFRACTIVE INDEX; ZINC; ZINC OXIDE; ZINC SULFIDE;

ANNEALING;

EID: 76749146828     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/7/075401     Document Type: Article

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