Photoluminescent and electroluminescent properties of Mn-doped ZnS nanocrystals

Journal of Applied Physics

Volumn 93, Issue 1, 2003, Pages 586-592

  Yang, Heesun ^a   Holloway, Paul H ^a   Ratna, Banahalli B ^b  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL STRUCTURE; ELECTROLUMINESCENCE; ELECTRON EMISSION; ELECTRON TRANSPORT PROPERTIES; EMISSION SPECTROSCOPY; HOLE MOBILITY; MANGANESE; MULTILAYERS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; ZINC SULFIDE;

HOLE INJECTION;

NANOSTRUCTURED MATERIALS;

EID: 0037249381     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1529316     Document Type: Article

References (25)

1. C. B. Murray, D. J. Norris, and M. G. Bawendi, J. Am. Chem. Soc. 115, 8706 (1993)
2. J. Lee, V. C. Sundar, J. R. Heine, M. G. Bawendi, and K. F. Jensen, Adv. Mater. 12, 1102 (2000).
3. H. Mattoussi, L. H. Radzilowski, B. O. Dabbousi, E. L. Thomas, M. G. Bawendi, and M. F. Fubner, J. Appl. Phys. 83, 7965 (1998).
4. M. Y. Cao, C. Lesser, S. Kirstein, H. Mohwald, A. L. Rogach, and H. Weller, J. Appl. Phys. 87, 2297 (2000).
5. L. Brus, IEEE J. Quantum Electron. 22, 1909 (1986).
6. M. L. Steigerwald and L. E. Brus, Annu. Rev. Mater. Sci. 19, 471 (1989).
7. R. N. Bhargava and D. Gallagher, Phys. Rev. Lett. 72, 416 (1994).
8. R. N. Bhargava, J. Lumin. 70, 85 (1996).
9. V. L. Colvin, M. C. Schlamp, and A. P. Alivisatos, Nature (London) 370, 354 (1994).
10. M. C. Schlamp, X. Peng, and A. P. Alivisatos, J. Appl. Phys. 82, 5837 (1997).
11. M. V. Aetemyev, V. Sperling, and U. Woggon, J. Appl. Phys. 81, 6975 (1997).
12. J. Huang, Y. Yang, S. Xue, B. Yang, S. Liu, and J. Shen, Appl. Phys. Lett. 70, 2335 (1997).
13. M. Gao, B. Richter, S. Kirstein, and H. Mohwald, J. Phys. Chem. B 102, 4096 (1998).
14. W. Que, Y. Zhou, Y. L. Lam, Y. C. Chan, and C. H. Kam, Appl. Phys. Lett. 73, 2727 (1998).
15. Y. Cao, G. Yu, C. Zhang, R. Menon, and A. J. Heeger, Synth. Met. 87, 171 (1997).
16. A. Elschner, F. Bruder, H. -W. Heuer, F. Jonas, and A. Karbach, Synth. Met. 111, 139 (2000).
17. A. L. Efros, Sov. Phys. Semicond. 16, 772 (1982).
18. L. Brus, J. Chem. Phys. 79, 5566 (1983).
19. W. Chen, R. Sammynaiken, R. Wallenberg, and J. Bovin, J. Appl. Phys. 89, 1120 (2001).
20. C. Benecke and H. -E. Gumlich, in Semiconductors and Semimetals, edited by J. K. Furdyna and J. Kossut (Academic, New York, 1988), Vol. 25, pp. 85-115.
21. D. Gallagher, W. E. Heady, J. M. Racz, and R. N. Bhargava, J. Mater. Res. 10, 870 (1995).
22. M. Stossel, J. Staudigel, F. Steuber, J. Simmer, and A. Winnacker, Appl. Phys. A: Mater. Sci. Process. 68, 387 (1999).
23. M. Fujihira and C. Ganzorig, Mater. Sci. Eng., B 85, 203 (2001).
24. E. Shaheen, E. Jabbour, B. Kippelen, and H. Grubbs, Appl. Phys. Lett. 74, 3212 (1999).
25. L. Chkoda, C. Heske, M. Sokolowski, E. Umbach, and J. Simmerer, Synth. Met. 111, 315 (2000).