Preparation and characterization of transparent conducting ZnS:Al films

Solid State Sciences

Volumn 11, Issue 1, 2009, Pages 224-232

  Prathap, P ^a   Revathi, N ^a   Subbaiah, Y P V ^b   Ramakrishna Reddy, K T ^a   Miles, R W ^c  

^a SRI VENKATESWARA UNIVERSITY   (India)

^b YOGI VEMANA UNIVERSITY   (India)

^c NORTHUMBRIA UNIVERSITY   (United Kingdom)

Author keywords

Close spaced evaporation; Optical properties; Structure; ZnS films

Indexed keywords

ALUMINUM; CONDUCTIVE FILMS; DOPING (ADDITIVES); EVAPORATION; FILM PREPARATION; METALLIC FILMS; MOISTURE; OPTICAL DATA PROCESSING; OPTICAL PROPERTIES; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DOPING; SURFACE ROUGHNESS; VAPORS; ZINC SULFIDE;

AL CONCENTRATIONS; AL INCORPORATIONS; APPROPRIATE TECHNIQUES; CHEMICAL PRECIPITATION METHODS; CLOSE-SPACED EVAPORATION; DOPANT CONCENTRATIONS; DOPANT LEVELS; DOPING CONCENTRATIONS; ELECTRICAL ANALYSES; GLASS SUBSTRATES; MORPHOLOGICAL STUDIES; OPTICAL ENERGY BAND GAPS; OPTICAL MEASUREMENTS; OPTICAL TRANSMITTANCES; OPTOELECTRONIC PROPERTIES; POLYCRYSTAL LINES; POWDERS SYNTHESIZED; PREFERRED ORIENTATIONS; STRUCTURE; TRANSPARENT CONDUCTING; ZNS FILMS;

OPTICAL FILMS;

EID: 57849144197     PISSN: 12932558     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solidstatesciences.2008.04.020     Document Type: Article

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