Photoluminescent properties of ZnO films deposited on Si substrates

Chinese Physics Letters

Volumn 18, Issue 3, 2001, Pages 441-442

  Zhang, Guo Bin ^a   Shi, Chao Shu ^a   Han, Zheng Fu ^a   Shi, Jun Yan ^a   Fu, Zhu Xi ^a   Kirm, M ^b   Zimmerer, G ^b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

II-VI SEMICONDUCTORS; LIGHT SOURCES; SILICON; SYNCHROTRON RADIATION; ZINC OXIDE;

D.C. SPUTTERING; DC-SPUTTERING; EMISSION BANDS; EXCITATION BANDS; EXCITATION SPECTRUM; PHOTO-LUMINESCENT PROPERTIES; SI SUBSTRATES; SYNCHROTRON RADIATION LIGHT SOURCE; VACUUM ULTRAVIOLET EXCITATION; ZNO FILMS;

METALLIC FILMS;

EID: 0035579757     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/18/3/344     Document Type: Article

References (10)

1. Krupanidhi S B and Sayer M 1984 J. Appl. Phys. 56 3308
2. Weissenrieder K S and Muller J 1997 Thin Solid Films 300 30
3. Detchprohm T and Hiramatsu K 1992 Appl. Phys. Lett. 61 2688
4. Martin S J, Schwartz S S, Gunshor R L and Pieiret R F 1983 J. Appl. Phys. 54 561
5. Vanheusden K et al 1996 J. Appl. Phys. 79 7983
6. Bagnall D M et al 1997 Appl. Phys. Lett. 70 2230
7. Shi C, Fu Z et al 1999 J. Electron Spectrosc. Related Phenom. 101-103 629
8. Fu Z X, Guo C X, Lin B X and Liao G H 1998 Chin. Phys. Lett. 15 457
9. Tanaka S et al 1995 J. Appl Phys. 77 4021
10. Gorla C R et al 1999 J. Appl. Phys. 85 2595