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Volumn 3, Issue 5, 2008, Pages 34-40

Low power SRAM with boost driver generating pulsed word line voltage for sub-1V operation

Author keywords

Circuit methodology; Low power; Low voltage; PD S0I; SRAM; Vth variation

Indexed keywords

LOW POWER ELECTRONICS;

EID: 76449103117     PISSN: 1796203X     EISSN: None     Source Type: Journal    
DOI: 10.4304/jcp.3.5.34-40     Document Type: Article
Times cited : (23)

References (12)
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    • Monitoring Scheme for Minimizing Power Consumption by Means of Supply and Threshold Voltage Control in Active and Standby Modes
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    • (2005) Symp. VLSI Circuits Dig. Tech. Papers , pp. 308-311
    • Nomura, M.1    Ikenaga, Y.2    Takeda, K.3    Nakazawa, Y.4    Aimoto, Y.5    Hagihara, Y.6
  • 6
    • 0023437909 scopus 로고    scopus 로고
    • E. Seevinck, F. J. List, and J. Lohstroh, Static-Noise Margin Analysis of MOS SRAM Cells, IEEE J, Solid-State Circuits, sc-22, pp. 748-754, Oct. 1987.
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    • 0242611631 scopus 로고    scopus 로고
    • M. Yamaoka, K. & Osada, and K. Ishibashi, 0.4-V Logic Library Friendly SRAM Array Using Rectangular Diffusion Cell and Delta-Array-Voltage Scheme, in Symp. VLSI Circuits Dig. Tech. Papers, pp. 170-173, June 2002.
    • M. Yamaoka, K. & Osada, and K. Ishibashi, "0.4-V Logic Library Friendly SRAM Array Using Rectangular Diffusion Cell and Delta-Array-Voltage Scheme," in Symp. VLSI Circuits Dig. Tech. Papers, pp. 170-173, June 2002.
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    • L. Chang, D. M. Fried, J. Hergenrother, J. W. Sleight, R. H. Dennard, R. K. Montoye, L. Sekaric, S. J. McNab, A. W. Toool, C. D, Adams, K. W. Geuarini, and W. Haensch, Stable SRAM Cell Design for the 32nm Node and Beyond, in Symp. VLSI Technology Dig. Tech Papers, pp. 128-129, June 2005.
    • L. Chang, D. M. Fried, J. Hergenrother, J. W. Sleight, R. H. Dennard, R. K. Montoye, L. Sekaric, S. J. McNab, A. W. Toool, C. D, Adams, K. W. Geuarini, and W. Haensch, "Stable SRAM Cell Design for the 32nm Node and Beyond," in Symp. VLSI Technology Dig. Tech Papers, pp. 128-129, June 2005.
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    • Y. Hirano, T. Ipposhi, H. Dang, T. Matsumoto, T. Iwamatsu, K. Nii, Y. Tsukamoto, H. Kato, S. Maegawa, K. Arimoto, Y. Inoue, M. Inuishi, and Y. Ohji, Impact of Actively Body-bias Controlled (ABC) SOI SRAM by using Direct Body Contact Technology for Low-Voltage Application, in IEDM Tech Dig., pp. 2.4.1-2.4.4, Dec. 2003.
    • Y. Hirano, T. Ipposhi, H. Dang, T. Matsumoto, T. Iwamatsu, K. Nii, Y. Tsukamoto, H. Kato, S. Maegawa, K. Arimoto, Y. Inoue, M. Inuishi, and Y. Ohji, "Impact of Actively Body-bias Controlled (ABC) SOI SRAM by using Direct Body Contact Technology for Low-Voltage Application," in IEDM Tech Dig., pp. 2.4.1-2.4.4, Dec. 2003.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.