Static-Noise Margin Analysis of MOS SRAM Cells

IEEE Journal of Solid-State Circuits

Volumn 22, Issue 5, 1987, Pages 748-754

  Seevinck, Evert ^a   List, Frans J ^a   Lohstroh, Jan ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL - RANDOM ACCESS; SEMICONDUCTOR DEVICES, MOS;

COMPLEMENTARY MOS (CMOS); MOS SRAM CELLS; STATIC RANDOM ACCESS MEMORY (SRAM); STATIC-NOISE MARGIN (SNM) ANALYSIS;

NOISE, SPURIOUS SIGNAL;

EID: 0023437909     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1987.1052809     Document Type: Article

References (9)

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