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Volumn 24, Issue 12, 2009, Pages 3569-3572

Strong below-band gap absorption of N-rich side GaNSb by metal-organic chemical vapor deposition

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION BAND; BAND GAPS; BANDGAP ABSORPTION; GROWTH CONDITIONS; METALORGANIC CHEMICAL VAPOR DEPOSITION; PROMISING MATERIALS; SOLID SOLUBILITIES;

EID: 76449116234     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2009.0435     Document Type: Article
Times cited : (7)

References (14)
  • 1
    • 0001605884 scopus 로고    scopus 로고
    • GaN-rich side of GaNAs growth by gas source molecular beam epitaxy
    • K. Iwata, H. Asahi, K. Asami, R. Kuoiwa, and S. Gond: GaN-rich side of GaNAs growth by gas source molecular beam epitaxy. Jpn. J. Appl. Phys. 37, 1436 (1998).
    • (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 1436
    • Iwata, K.1    Asahi, H.2    Asami, K.3    Kuoiwa, R.4    Gond, S.5
  • 5
    • 1842475351 scopus 로고    scopus 로고
    • Growth of GaNAs alloys on the N-rich side with high As content by metalorganic vapor phase epitaxy
    • A. Kimura, H.F. Tang, and T.F. Kuech: Growth of GaNAs alloys on the N-rich side with high As content by metalorganic vapor phase epitaxy. J. Cryst. Growth 265, 71 (2004).
    • (2004) J. Cryst. Growth , vol.265 , pp. 71
    • Kimura, A.1    Tang, H.F.2    Kuech, T.F.3
  • 6
    • 0040028994 scopus 로고    scopus 로고
    • Theoretical predictions of unstable two phase regions in wurtzite group-IIInitride-based ternary and quaternary material systems using modified valence-force-field model
    • T. Takayama, M. Yuri, K. Itoh, and J.S. Harris: Theoretical predictions of unstable two phase regions in wurtzite group-IIInitride-based ternary and quaternary material systems using modified valence-force-field model. J. Appl. Phys. 90, 2358 (2001).
    • (2001) J. Appl. Phys. , vol.90 , pp. 2358
    • Takayama, T.1    Yuri, M.2    Itoh, K.3    Harris, J.S.4
  • 7
    • 0036530484 scopus 로고    scopus 로고
    • Crystal growth of nitride-rich GaNP by laser-assisted metalorganic chemical-vapor deposition
    • S. Yoshida, J. Kikawa, and Y. Itoh: Crystal growth of nitride-rich GaNP by laser-assisted metalorganic chemical-vapor deposition. J. Cryst. Growth 237-239, 1037 (2002).
    • (2002) J. Cryst. Growth , vol.237-239 , pp. 1037
    • Yoshida, S.1    Kikawa, J.2    Itoh, Y.3
  • 11
    • 0000329446 scopus 로고    scopus 로고
    • Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metal organic vapor phase epitaxy
    • L. Zhang, H.F. Tang, and T.F. Kuech: Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metal organic vapor phase epitaxy. Appl. Phys. Lett. 79, 3059 (2001).
    • (2001) Appl. Phys. Lett. , vol.79 , pp. 3059
    • Zhang, L.1    Tang, H.F.2    Kuech, T.F.3
  • 13
    • 0036735483 scopus 로고    scopus 로고
    • The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy
    • L. Zhang, H.F. Tang, J. Schieke, M. Mavrikakis, and T.F. Kuech: The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy. J. Appl. Phys. 92, 2304 (2002).
    • (2002) J. Appl. Phys. , vol.92 , pp. 2304
    • Zhang, L.1    Tang, H.F.2    Schieke, J.3    Mavrikakis, M.4    Kuech, T.F.5
  • 14
    • 0035535281 scopus 로고    scopus 로고
    • GaN grown by molecular beam epitaxy with antimony as surfactant
    • C.W. Pei, B. Turk, J.B. Heroux, and W.I. Wang: GaN grown by molecular beam epitaxy with antimony as surfactant. J. Vac. Sci. Technol., B 19, 1426 (2001).
    • (2001) J. Vac. Sci. Technol., B , vol.19 , pp. 1426
    • Pei, C.W.1    Turk, B.2    Heroux, J.B.3    Wang, W.I.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.