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Volumn 37, Issue 5, 2008, Pages 546-549

Influence of Mg doping on the morphological, optical, and structural properties of InGaN/GaN multiple quantum wells

(7) Chen, Z a Fichtenbaum, N a Brown, D a Keller, S a Mishra, U K a Denbaars, S P a Nakamura, S a

a University of California (United States)

Author keywords

Atomic force microscopy (AFM); InGaN; Metalorganic chemical vapor deposition (MOCVD); Multiple quantum wells (MQWs); Photoluminescence (PL); V defects

Indexed keywords

MAGNESIUM DOPING;

ATOMIC FORCE MICROSCOPY; DEFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 42249116067 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-007-0332-0 Document Type: Conference Paper

Times cited : (11)

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