Fabrication and properties of metal-PZT-metal capacitors by liquid delivery MOCVD

Integrated Ferroelectrics

Volumn 100, Issue 1, 2008, Pages 114-122

  Xie, Dan ^a   Li, Rui ^a   Han, Xueguang ^a   Ruan, Yong ^a   Ren, Tian Ling ^a   Liu, Li Tian ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Chemical vapor deposition; Electrical properties; Ferroelectric thin films; Lead zirconate titanate

Indexed keywords

APPLIED VOLTAGES; COCKTAIL SOURCE; COERCIVE FIELD; ELECTRICAL PROPERTIES; ELECTRICAL PROPERTY; FERROELECTRIC PROPERTY; LEAD ZIRCONATE TITANATE; LIQUID DELIVERY; LIQUID DELIVERY MOCVD; METAL CAPACITORS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; PROCESSING CONDITION; PZT; PZT FILM; REMANENT POLARIZATION; SI SUBSTRATES; SI WAFER; THICKNESS UNIFORMITY;

CAPACITANCE; CAPACITORS; DEPOSITION; FERROELECTRIC MATERIALS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; FILM GROWTH; IRIDIUM; LEAD; LIQUIDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PLATINUM; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SUBSTRATES; ZIRCONIUM;

FERROELECTRIC FILMS;

EID: 76349119060     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580802540538     Document Type: Conference Paper

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