Low temperature PZT film by MOCVD

Integrated Ferroelectrics

Volumn 59, Issue , 2003, Pages 1465-1473

  Rice, C E ^a   Cuchiaro, J D ^a   Sun, S ^a   Provost, L G ^a   Tompa, G S ^a   Beratan, Howard ^b   Hanson, Charles ^b   Tanner, Hilary ^b  

^a STRUCTURED MATERIALS INDUSTRIES INC   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

Dielectric; Ferroelectric; MOCVD; Modeling; Oxide; Pyroelectric; RDR; Waveguides

Indexed keywords

DEFECT DENSITY; LEAD ZIRCONIUM TITANIUM OXIDE (PZT); RDR; THERMAL BUDGETS;

COMPUTER SIMULATION; CRYSTAL DEFECTS; LEAD COMPOUNDS; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PYROELECTRICITY; TITANIUM COMPOUNDS; WAVEGUIDES;

FERROELECTRIC THIN FILMS;

EID: 33744961854     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580390259957     Document Type: Article

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